We report on the effect of inserted photonic crystalline(Ph-C)in the GaN epitaxial layer on the incorporation of the in-dium component for the InGaN-based green LED.The adoption of Ph-C in the GaN layer shifted the Raman peak value of E2 mode of GaN to lower frequency and resulted in a tensive stress relief.The stress relief can be attributed to strained lattices restoring in the matrix of Ph-C and the GaN pseudo-epitaxy over the air-void of the Ph-C.Moreover,the HRXRD rocking curves and AFM results show that the insertion of Ph-C also improves the crystal quality.With the inserted Ph-C,the indium compon-ent in the multiple quantum wells of the green LED(Ph-C LED)was enhanced.This resulted in a 6-nm red-shift of the peak wavelength.Furthermore,the LOP of the Ph-C LED was enhanced by 10.65％under an injection current of 20 mA.

Yunqi Li;Xinwei Wang;Ning Zhang;Xuecheng Wei;Junxi Wang

Institute of First Medical Center,Chinese PLA General Hospital,Beijing 100853,China;State Key Laboratory of Solid-State Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

半导体学报（英文版）

[1]Yunqi Li;Xinwei Wang;Ning Zhang;Xuecheng Wei;Junxi Wang-.Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer)[J].半导体学报（英文版）,2022(07):87-91

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