典型文献
Single-bit full adder and logic gate based on synthetic antiferromagnetic bilayer skyrmions
文献摘要：
Skyrmion-based devices are promising candi-dates for non-volatile memory and low-delay time com-putation.Many skyrmion-based devices execute operation by controlling skyrmion trajectory,which can be impeded by the skyrmion Hall effect.Here,the design of skyrmion-based arithmetic devices built on synthetic antiferromag-netic(SyAF)structures is presented,where the structure can greatly suppress skyrmion Hall effect.In this study,the operations of skyrmion-based half adder,full adder,and XOR logic gate are executed by introducing geometric notches and tilted edges,which can annihilate or diverge skyrmion.Performance of these skyrmion-based devices is evaluated,where the delay time and energy-delay product of the single-bit full adder are 1.95 ns and 2.50×10-22 Js,which are only 12％and 79％those of the previously proposed skyrmion-based single-bit full adder.This improvement is significant in the construction of ripple-carry adder and ripple-carry adder-subtractor.Therefore,our skyrmion-based SyAF arithmetic device is a promising candidate to develop high-speed spintronic devices.
文献关键词：
中图分类号：
作者姓名：
Kai Yu Mak;Jing Xia;Xi-Chao Zhang;Li Li;Mouad Fattouhi;Motohiko Ezawa;Xiao-Xi Liu;Yan Zhou
作者机构：
School of Science and Engineering,The Chinese University of Hong Kong,Shenzhen 518172,China;College of Physics and Electronic Engineering,Sichuan Normal University,Chengdu 610068,China;Department of Electrical and Computer Engineering,Shinshu University,Nagano 380-8553,Japan;Department of Applied Physics,University of Salamanca,Salamanca 37008,Spain;Department of Applied Physics,University of Tokyo,Tokyo 113-8656,Japan
文献出处：
引用格式：
[1]Kai Yu Mak;Jing Xia;Xi-Chao Zhang;Li Li;Mouad Fattouhi;Motohiko Ezawa;Xiao-Xi Liu;Yan Zhou-.Single-bit full adder and logic gate based on synthetic antiferromagnetic bilayer skyrmions)[J].稀有金属（英文版）,2022(07):2249-2258
A类：
adder,antiferromag,SyAF,notches,annihilate
B类：
Single,bit,full,logic,gate,synthetic,antiferromagnetic,bilayer,skyrmions,Skyrmion,devices,are,promising,dates,volatile,memory,low,delay,com,putation,Many,by,controlling,trajectory,which,be,impeded,Hall,effect,Here,design,arithmetic,built,structures,presented,where,greatly,suppress,In,this,study,operations,half,XOR,executed,introducing,geometric,tilted,edges,diverge,Performance,these,evaluated,energy,product,single,Js,only,those,previously,proposed,This,improvement,significant,construction,ripple,carry,subtractor,Therefore,our,candidate,develop,high,speed,spintronic
AB值：
0.439038
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