典型文献
Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode
文献摘要：
This paper reports the improvement of electrical,ferroelectric and endurance of Hf0.5Zr0.5O2(HZO)thin-film capacitors by implementing W electrode.The W/HZO/W capacitor shows excellent pristine 2Pr values of 45.1 μC/cm2 at±6 V,which are much higher than those of TiN/HZO/W(34.4 μC/cm2)and W/HZO/TiN(26.9 μC/cm2)capacitors.Notably,the maximum initial 2Pr value of W/HZO/W capacitor can reach as high as 57.9 μC/cm2 at±7.5 V.These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode,allowing for enhancement of o-phase formation.Moreover,the W/HZO/W capacitor also exhibits higher endurance,smaller wake-up effect(10.1％)and superior fatigue properties up to 1.5×1010cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors.Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magni-tude compared to the W/HZO/TiN capacitor.These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation,reduces oxygen vacancies,mitigates wake-up effect and improves reliability.
文献关键词：
中图分类号：
作者姓名：
Dao Wang;Yan Zhang;Jiali Wang;Chunlai Luo;Ming Li;Wentao Shuai;Ruiqiang Tao;Zhen Fan;Deyang Chen;Min Zeng;Jiyan Y.Dai;Xubing B.Lu;J.-M.Liu
作者机构：
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China;Department of Applied Physics,The Hong Kong Polytechnic University,Hung Hom,Kowloon,Hong Kong,China;Laboratory of Solid State Microstructures and Innovation Centre of Advanced Microstructures,Nanjing University,Nanjing 210093,China
文献出处：
引用格式：
[1]Dao Wang;Yan Zhang;Jiali Wang;Chunlai Luo;Ming Li;Wentao Shuai;Ruiqiang Tao;Zhen Fan;Deyang Chen;Min Zeng;Jiyan Y.Dai;Xubing B.Lu;J.-M.Liu-.Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode)[J].材料科学技术（英文版）,2022(09):1-7
A类：
1010cycles,magni
B类：
Enhanced,ferroelectric,polarization,less,wake,improved,endurance,Hf0,5Zr0,5O2,thin,films,by,implementing,electrode,This,paper,reports,electrical,HZO,capacitors,shows,excellent,pristine,2Pr,values,which,much,higher,than,those,TiN,Notably,maximum,initial,reach,These,strong,effects,ascribed,fairly,thermal,expansion,coefficient,provides,larger,plane,tensile,strain,compared,allowing,enhancement,phase,formation,Moreover,also,exhibits,smaller,superior,fatigue,properties,Such,improvements,mainly,due,decreased,leakage,current,more,order,tude,results,demonstrate,that,capping,material,plays,important,role,reduces,oxygen,vacancies,mitigates,improves,reliability
AB值：
0.460812
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机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
