首站-论文投稿智能助手
典型文献
Site occupation and energy transfer in full color emitting phosphor Ba2Ca(BO3)2∶Ce3+(K+),Eu2,Mn2+
文献摘要:
White light-emitting diodes(WLEDs)fabricated by single-phase full color emitting phosphor are an emerging solution for health lighting.The crystallographic site occupation of activators in a proper host lattice is crucial for sophisticated design of such phosphor.Here,we report a high quality white light-emitting phosphor Ba2Ca(BO3)2∶Ce3+(K+),Eu2+,Mn2+with spectral distribution covering whole visible region.Blue light emission originates from Ce3+ions occupying preferentially Ba2+site by controlling synthesis conditions.Green and red lights are obtained from Eu2+occupying Ba2+(and Ca2+)site and Mn2+occupying Ca2+site,respectively.In this triple-doped phosphor,strong red emission with a low concentration of Mn2+is realized by the efficient energy transfer from Ce3+and Eu2+to Mn2+.Furthermore,high quality white light is accomplished by properly tuning the relative doping amount of Ce3+(K+)/Eu2+/Mn2+based on efficient simultaneous energy transfer.The results indicate that Ba2Ca(BO3)2∶Ce3+(K+),Eu2+,Mn2+is a promising white light-emitting phosphor in WLEDs application.
文献关键词:
作者姓名:
Qingsong Hu;Zaifa Pan;Guijie Liang
作者机构:
Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,China;College of Chemical Engineering,Zhejiang University of Technology,Hangzhou 310014,China
引用格式:
[1]Qingsong Hu;Zaifa Pan;Guijie Liang-.Site occupation and energy transfer in full color emitting phosphor Ba2Ca(BO3)2∶Ce3+(K+),Eu2,Mn2+)[J].稀土学报(英文版),2022(11):1691-1698
A类:
Ba2Ca,Mn2+with,Ce3+ions,Ba2+site,Eu2+occupying,Mn2+occupying,Ca2+site,Mn2+is,Eu2+to,Mn2+based
B类:
Site,occupation,energy,transfer,full,color,emitting,phosphor,BO3,K+,White,diodes,WLEDs,fabricated,by,single,phase,are,emerging,solution,health,lighting,crystallographic,activators,host,lattice,crucial,sophisticated,design,such,Here,we,report,high,quality,white,spectral,distribution,covering,whole,visible,region,Blue,emission,originates,from,preferentially,controlling,synthesis,conditions,Green,red,lights,obtained,respectively,In,this,triple,doped,strong,low,concentration,realized,efficient,Ce3+and,Furthermore,accomplished,properly,tuning,relative,doping,amount,simultaneous,results,indicate,that,promising,application
AB值:
0.445588
相似文献
Compact ultrabroadband light-emitting diodes based on lanthanide-doped lead-free double perovskites
Shilin Jin;Renfu Li;Hai Huang;Naizhong Jiang;Jidong Lin;Shaoxiong Wang;Yuanhui Zheng;Xueyuan Chen;Daqin Chen-College of Physics and Energy,Fujian Normal University,Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials,Fuzhou 350117,China;Fujian Science&Technology Innovation Laboratory for Optoelectronic Information,Fuzhou 350116,China;CAS Key Laboratory of Design and Assembly of Functional Nanostructures,Fujian Key Laboratory of Nanomaterials and State Key Laboratory of Structural Chemistry,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou,Fujian 350002,China;Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering,Fuzhou 350117,China;Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage,Fuzhou 350117,China;College of Chemistry,Fuzhou University,Fuzhou 350116,China
Graphene-driving strain engineering to enable strain-free epitaxy of AIN film for deep ultraviolet light-emitting diode
Hongliang Chang;Zhetong Liu;Shenyuan Yang;Yaqi Gao;Jingyuan Shan;Bingyao Liu;Jingyu Sun;Zhaolong Chen;Jianchang Yan;Zhiqiang Liu;Junxi Wang;Peng Gao;Jinmin Li;Zhongfan Liu;Tongbo Wei-Research and Development Center for Semiconductor Lighting Technology,Institute of Semiconductors,Chinese Academy of Sciences,100083 Beijing,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,100049 Beijing,China;Center for Nanochemistry(CNC),Beijing Science and Engineering Center for Nanocarbons,Beijing National Laboratory for Molecular Sciences,College of Chemistry and Molecular Engineering,Peking University,100871 Beijing,China;Electron Microscopy Laboratory,and International Center for Quantum Materials,School of Physics,Peking University,100871 Beijing,China;Beijing graphene institute(BGI),100095 Beijing,China;Academy for Advanced Interdisciplinary Studies,Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials,Peking University,100871 Beijing,China;State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,100083 Beijing,China
Revealing the nature of optical activity in carbon dots produced from different chiral precursor molecules
Ananya Das;Evgeny V.Kundelev;Anna A.Vedernikova;Sergei A.Cherevkov;Denis V.Danilov;Aleksandra V.Koroleva;Evgeniy V.Zhizhin;Anton N.Tsypkin;Aleksandr P.Litvin;Alexander V.Baranov;Anatoly V.Fedorov;Elena V.Ushakova;Andrey L.Rogach-Center of Information Optical Technologies,ITMO University,Saint Petersburg 197101,Russia;Research Park,Saint Petersburg State University,Saint Petersburg 199034,Russia;Laboratory of Femtosecond Optics and Femtotechnology,ITMO University,Saint Petersburg 197101,Russia;Laboratory of Quantum Processes and Measurements,ITMO University,Saint Petersburg 197101,Russia;Department of Materials Science and Engineering,and Centre for Functional Photonics(CFP),City University of Hong Kong,Kowloon,Hong Kong SAR 999077,China;Shenzhen Research Institute,City University of Hong Kong,Shenzhen 518057,China
Highly efficient Fe3+-doped A2BB′O6(A = Sr+,Ca2+;B,B′ = In3+,Sb5+,Sn4+)broadband near-infrared-emitting phosphors for spectroscopic analysis
Dongjie Liu;Guogang Li;Peipei Dang;Qianqian Zhang;Yi Wei;Lei Qiu;Maxim S.Molokeev;Hongzhou Lian;Mengmeng Shang;Jun Lin-State Key Laboratory of Rare Earth Resource Utilization,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences,130022 Changchun,China;University of Science and Technology of China,230026 Hefei,China;Faculty of Materials Science and Chemistry,China University of Geosciences,430074 Wuhan,China;Zhejiang Institute,China University of Geosciences,311305 Hangzhou,China;Laboratory of Crystal Physics,Kirensky Institute of Physics,Federal Research Center KSC SB RAS,Krasnoyarsk 660036,Russia;Institute of Engineering Physics and Radioelectronics,Siberian Federal University,Krasnoyarsk 660041,Russia;Research and Development Department,Kemerovo State University,Kemerovo 650000,Russia;School of Material Science and Engineering,Shandong University,266071 Jinan,China
Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure
Lingmei Kong;Jialong Wu;Yunguo Li;Fan Cao;Feijiu Wang;Qianqian Wu;Piaoyang Shen;Chengxi Zhang;Yun Luo;Lin Wang;Lyudmila Turyanska;Xingwei Ding;Jianhua Zhang;Yongbiao Zhao;Xuyong Yang-Key Laboratory of Advanced Display and System Applications of Ministry of Education,Shanghai University,Shanghai 200072,China;CAS Key Laboratory of Crust-Mantle Materials and Environments,School of Earth and Space Sciences,University of Science and Technology of China,Hefei 230026,China;Henan Key Laboratory of Photovoltaic Materials,Henan University,Kaifeng 475004,China;Faculty of Engineering,University of Nottingham,Nottingham NG72RD,UK;Center for Optoelectronic Engineering Research,Department of Physics,School of Physics and Astronomy,Yunnan University,Kunming 650091,China
机标中图分类号,由域田数据科技根据网络公开资料自动分析生成,仅供学习研究参考。