To solve the Flash-based FPGA in the manufacturing process,the ion implantation process will bring electrons into the floating gate of the P-channel Flash cell so that the Flash switch is in a weak conduction state,resulting in the Flash-based FPGA eigenstate current problem.In this paper,the mechanism of its generation is analyzed,and four methods are used includ-ing ultraviolet light erasing,high-temperature baking,X-ray irradiation,and circuit logic control.A comparison of these four methods can identify the circuit design by using circuit logic to control the path of the power supply that is the most suitable and reliable method to solve the Flash-based FPGA eigenstate current problem.By this method,the power-on current of 3.5 mil-lion Flash-based FPGA can be reduced to less than 0.3 A,and the chip can start normally.The function and performance of the chip can then be further tested and evaluated,which is one of the key technologies for developing Flash-based FPGA.

Yueer Shan;Zhengzhou Cao;Guozhu Liu

East Technologies,Inc.Wuxi,Wuxi 214072,China;China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214072,China

半导体学报（英文版）

[1]Yueer Shan;Zhengzhou Cao;Guozhu Liu-.Research on eigenstate current control technology of Flash-based FPGA)[J].半导体学报（英文版）,2022(12):59-68

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