典型文献
Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers
文献摘要：
The 808-nm vertical cavity surface emitting laser(VCSEL)with strained In0.13Ga0.75Al0.12As/Al0.3Ga0.7As quan-tum wells is designed and fabricated.Compared with the VCSELs with Al0.05Ga0.95As/Al0.3Ga0.7As quantum wells,the VCSEL with strained In0.13Ga0.75Al0.12As/Al0.3Ga0.7As quantum wells is demonstrated to possess higher power conver-sion efficiency(PCE)and better temperature stability.The maximum PCE of 43.8％for 10-μm VCSEL is achieved at an ambient temperature of 30℃.The size-dependent thermal characteristics are also analyzed by characterizing the spec-tral power and output power.It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.
文献关键词：
中图分类号：
作者姓名：
Zhuang-Zhuang Zhao;Meng Xun;Guan-Zhong Pan;Yun Sun;Jing-Tao Zhou;De-Xin Wu
作者机构：
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
文献出处：
引用格式：
[1]Zhuang-Zhuang Zhao;Meng Xun;Guan-Zhong Pan;Yun Sun;Jing-Tao Zhou;De-Xin Wu-.Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers)[J].中国物理B（英文版）,2022(03):336-342
A类：
InGaAlAs,13Ga0,12As,7As,05Ga0,95As
B类：
Improved,thermal,property,strained,AlGaAs,quantum,wells,vertical,cavity,surface,emitting,lasers,In0,75Al0,designed,fabricated,Compared,VCSELs,demonstrated,possess,higher,power,conver,sion,efficiency,PCE,better,temperature,stability,maximum,achieved,ambient,size,dependent,characteristics,also,analyzed,by,characterizing,spec,tral,output,It,demonstrates,that,small,oxide,aperture,advantageous,stable,performance
AB值：
0.400793
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