典型文献
Multi-Bandgap Monolithic Metal Nanowire Percolation Network Sensor Integration by Reversible Selective Laser?Induced Redox
文献摘要:
Active electronics are usually composed of semiconduc-tor and metal electrodes which are connected by multiple vacuum depo-sition steps and photolithography patterning. However, the presence of interface of dissimilar material between semiconductor and metal electrode makes various problems in electrical contacts and mechani-cal failure. The ideal electronics should not have defective interfaces of dissimilar materials. In this study, we developed a novel method to fabricate active electronic components in a monolithic seamless fashion where both metal and semiconductor can be prepared from the same monolith material without creating a semiconductor–metal interface by reversible selective laser-induced redox (rSLIR) method. Furthermore, rSLIR can control the oxidation state of transition metal (Cu) to yield semiconductors with two different bandgap states -(Cu2O and CuO with bandgaps of 2.1 and 1.2 eV, respectively), which may allow multifunctional sensors with multiple bandgaps from the same materials. This novel method enables the seamless integration of single-phase Cu, -Cu2O, and CuO, simultaneously while allowing reversible, selec-tive conversion between oxidation states by simply shining laser light. Moreover, we fabricated a flexible monolithic metal–semiconduc-tor–metal multispectral photodetector that can detect multiple wavelengths. The unique monolithic characteristics of rSLIR process can provide next-generation electronics fabrication method overcoming the limitation of conventional photolithography methods.
文献关键词:
中图分类号:
作者姓名:
Junhyuk Bang;Yeongju Jung;Hyungjun Kim;Dongkwan Kim;Maenghyo Cho;Seung Hwan Ko
作者机构:
Applied Nano and Thermal Science Lab,Department of Mechanical Engineering,Seoul National University,1 Gwanak?ro,Gwanak?gu,Seoul 151?742,Republic of Korea;Department of Mechanical Engineering,Seoul National University,1 Gwanak?ro,Gwanak?gu,Seoul 08826,Republic of Korea;Institute of Advanced Machines and Design,Institute of Engineering Research,Seoul National University,Seoul 08826,Republic of Korea
文献出处:
引用格式:
[1]Junhyuk Bang;Yeongju Jung;Hyungjun Kim;Dongkwan Kim;Maenghyo Cho;Seung Hwan Ko-.Multi-Bandgap Monolithic Metal Nanowire Percolation Network Sensor Integration by Reversible Selective Laser?Induced Redox)[J].纳微快报(英文),2022(03):216-228
A类:
Percolation,semiconduc,photolithography,rSLIR
B类:
Multi,Bandgap,Monolithic,Metal,Nanowire,Network,Sensor,Integration,by,Reversible,Selective,Laser,Induced,Redox,Active,electronics,usually,composed,metal,electrodes,which,connected,multiple,vacuum,depo,steps,patterning,However,presence,dissimilar,between,makes,various,problems,electrical,contacts,mechani,failure,ideal,should,not,have,defective,interfaces,materials,this,study,developed,novel,active,components,monolithic,seamless,fashion,where,both,can,prepared,from,same,without,creating,reversible,selective,laser,induced,redox,Furthermore,control,oxidation,transition,yield,semiconductors,different,states,Cu2O,CuO,bandgaps,eV,respectively,may,multifunctional,sensors,This,enables,integration,single,phase,simultaneously,while,allowing,conversion,simply,shining,light,Moreover,fabricated,flexible,multispectral,photodetector,that,wavelengths,unique,characteristics,process,provide,next,generation,fabrication,overcoming,limitation,conventional,methods
AB值:
0.55448
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