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典型文献
Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers
文献摘要:
In this paper,we propose a specific two-layer model consisting of a func-tionally graded(FG)layer and a piezoelectric semiconductor(PS)layer.Based on the macroscopic theory of PS materials,the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are in-vestigated.The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series.Results show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG layer.In addition,by creating jump discontinuities in the material proper-ties of the FG layer,potential barriers/wells can be produced in the middle of the fiber.Similarly,the potential barrier configuration near the interface of a homogeneous PS PN junction can also be manipulated in this way,which offers a new choice for the design of PN junction based devices.
文献关键词:
作者姓名:
Kai FANG;Nian LI;Peng LI;Zhenghua QIAN;V.KOLESOV;I.KUZNETSOVA
作者机构:
State Key Laboratory of Mechanics and Control of Mechanical Structures,College of Aerospace Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China;Nanjing University of Aeronautics and Astronautics Shenzhen Research Institute,Shenzhen 518057,Guangdong Province,China;Kotel'nikov Institute of Radio Engineering and Electronics of Russian Academy of Sciences,Moscow 125009,Russia
引用格式:
[1]Kai FANG;Nian LI;Peng LI;Zhenghua QIAN;V.KOLESOV;I.KUZNETSOVA-.Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers)[J].应用数学和力学(英文版),2022(09):1367-1380
A类:
piezotronic
B类:
Effects,attached,functionally,graded,layer,electromechanical,behaviors,piezoelectric,semiconductor,fibers,In,this,paper,propose,specific,two,model,consisting,FG,PS,Based,macroscopic,theory,materials,effects,brought,about,by,homogeneous,type,PN,junctions,are,vestigated,analytical,solutions,fields,obtained,expanding,displacement,carrier,concentration,variation,into,power,series,Results,show,that,antisymmetry,potential,electron,distributions,destroyed,due,inhomogeneity,addition,creating,jump,discontinuities,proper,barriers,wells,can,produced,middle,Similarly,configuration,near,interface,also,manipulated,way,which,offers,new,choice,design,devices
AB值:
0.531318
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