典型文献
Lateral characteristics improvements of DBR laser diode with tapered Bragg grating
文献摘要：
Broad area semiconductor laser(BAL)has poor lateral beam quality due to lateral mode competition,which limits its application as a high-power optical source.In this work,the distributed Bragg reflector laser diode with tapered grating(TDBR-LD)is studied.By changing the lateral width,the tapered grating increases the loss of high-order lateral modes,thus improving the lateral characteristics of the laser diode.The measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 A.In contrast to the straight distributed Bragg reflector laser diode(SDBR-LD),the lateral far field divergence of TDBR-LD is measured to be 5.23° at 1 A,representing a 17％decline.The linewidth of TDBR-LD is 0.4 nm at 0.2 A,which is reduced by nearly 43％in comparison with that of SDBR-LD.Meanwhile,both of the devices have a maximum output power value of approximate 470 mW.
文献关键词：
中图分类号：
作者姓名：
Qi-Qi Wang;Li Xu;Jie Fan;Hai-Zhu Wang;Xiao-Hui Ma
作者机构：
State Key Laboratory of High-Power Laser Diodes,Changchun University of Science and Technology,Changchun 130022,China
文献出处：
引用格式：
[1]Qi-Qi Wang;Li Xu;Jie Fan;Hai-Zhu Wang;Xiao-Hui Ma-.Lateral characteristics improvements of DBR laser diode with tapered Bragg grating)[J].中国物理B（英文版）,2022(09):344-349
A类：
TDBR,SDBR
B类：
Lateral,characteristics,improvements,laser,diode,tapered,Bragg,grating,Broad,area,semiconductor,BAL,has,poor,lateral,beam,quality,due,competition,which,limits,application,high,power,optical,source,In,this,work,distributed,reflector,LD,studied,By,changing,increases,loss,order,modes,thus,improving,measuring,results,show,that,can,achieve,single,lobe,output,under,contrast,straight,far,field,divergence,measured,representing,decline,linewidth,reduced,by,nearly,comparison,Meanwhile,both,devices,have,maximum,value,approximate,mW
AB值：
0.504337
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