典型文献
Experimental observation of pseudogap in a modulation-doped Mott insulator:Sn/Si(111)-(√3×√3)R30°
文献摘要:
Unusual quantum phenomena usually emerge upon doping Mott insulators.Using a molecular beam epitaxy system integrated with cryogenic scanning tunneling microscope,we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-(√3 x √3)R30°.In underdoped regions,we observe a universal pseudogap opening around the Fermi level,which changes little with the applied magnetic field and the occurrence of Sn vacancies.The pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the Mott insulating phase.Our findings,along with the previously observed superconductivity at a higher doping level,are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.
文献关键词:
中图分类号:
作者姓名:
Yan-Ling Xiong;Jia-Qi Guan;Rui-Feng Wang;Can-Li Song;Xu-Cun Ma;Qi-Kun Xue
作者机构:
State Key Laboratory of Low-Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China;Frontier Science Center for Quantum Information,Beijing 100084,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China;Southern University of Science and Technology,Shenzhen 518055,China
文献出处:
引用格式:
[1]Yan-Ling Xiong;Jia-Qi Guan;Rui-Feng Wang;Can-Li Song;Xu-Cun Ma;Qi-Kun Xue-.Experimental observation of pseudogap in a modulation-doped Mott insulator:Sn/Si(111)-(√3×√3)R30°)[J].中国物理B(英文版),2022(06):129-133
A类:
underdoped
B类:
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AB值:
0.649061
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