首站-论文投稿智能助手
典型文献
Solutions and memory effect of fractional-order chaotic system:A review
文献摘要:
Fractional calculus is a 300 years topic,which has been introduced to real physics systems modeling and engineering applications.In the last few decades,fractional-order nonlinear chaotic systems have been widely investigated.Firstly,the most used methods to solve fractional-order chaotic systems are reviewed.Characteristics and memory effect in those method are summarized.Then we discuss the memory effect in the fractional-order chaotic systems through the fractional-order calculus and numerical solution algorithms.It shows that the integer-order derivative has full memory effect,while the fractional-order derivative has nonideal memory effect due to the kernel function.Memory loss and short memory are discussed.Finally,applications of the fractional-order chaotic systems regarding the memory effects are investigated.The work summarized in this manuscript provides reference value for the applied scientists and engineering community of fractional-order nonlinear chaotic systems.
文献关键词:
作者姓名:
Shaobo He;Huihai Wang;Kehui Sun
作者机构:
School of Physics and Electronics,Central South University,Changsha 410083,China
引用格式:
[1]Shaobo He;Huihai Wang;Kehui Sun-.Solutions and memory effect of fractional-order chaotic system:A review)[J].中国物理B(英文版),2022(06):10-30
A类:
nonideal
B类:
Solutions,memory,fractional,order,chaotic,Fractional,calculus,years,topic,which,has,been,introduced,real,physics,systems,modeling,engineering,applications,In,last,few,decades,nonlinear,have,widely,investigated,Firstly,most,used,methods,solve,are,reviewed,Characteristics,those,summarized,Then,through,numerical,solution,algorithms,It,shows,that,integer,derivative,full,while,due,kernel,function,Memory,loss,short,discussed,Finally,regarding,effects,work,this,manuscript,provides,reference,value,applied,scientists,community
AB值:
0.496143
相似文献
Mechanical behavior and deformation mechanism of shape memory bulk metallic glass composites synthesized by powder metallurgy
Tianbing He;Tiwen Lu;Daniel ?opu;Xiaoliang Han;Haizhou Lu;Kornelius Nielsch;Jürgen Eckert;Nevaf Ciftci;Volker Uhlenwinkel;Konrad Kosiba;Sergio Scudino-Leibniz IFW Dresden,Institute for Complex Materials,Helmholtzstra?e 20,01069 Dresden,Germany;Guangdong Key Laboratory for Advanced Metallic Materials Processing,South China University of Technology,Guangzhou 510640,China;Erich Schmid Institute of Materials Science,Austrian Academy of Sciences,Jahnstra?e 12,Leoben A-8700,Austria;Leibniz IFW Dresden,Institute for Metallic Materials,Helmholtzstraf?e 20,01069 Dresden,Germany;TU Dresden,Institute of Materials Science,01062 Dresden,Germany;TU Dresden,Institute of Applied Physics,01062 Dresden,Germany;Department Materials Physics,Montanuniversitat Leoben,Jahnstra?e 12,A-8700 Leoben,Austria;Leibniz Institute for Materials Engineering IWT,28359 Bremen,Germany;University of Bremen,Faculty of Production Engineering,28359 Bremen,Germany
Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform
Chengli Wang;Jin Li;Ailun Yi;Zhiwei Fang;Liping Zhou;Zhe Wang;Rui Niu;Yang Chen;Jiaxiang Zhang;Ya Cheng;Junqiu Liu;Chun-Hua Dong;Xin Ou-State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,200050 Shanghai,China;The Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,100049 Beijing,China;CAS Key Laboratory of Quantum Information,University of Science and Technology of China,230026 Hefei,China;CAS Center for Excellence in Quantum Information and Quantum Physics,University of Science and Technology of China,230026 Hefei,China;The Extreme Optoelectromechanics Laboratory(XXL),School of Physics and Electronic Science,East China Normal University,200241 Shanghai,China;State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,201800 Shanghai,China;International Quantum Academy,518048 Shenzhen,China;Hefei National Laboratory,University of Science and Technology of China,Hefei 230026,China
Room-temperature third-order nonlinear Hall effect in Weyl semimetal TalrTe4
Cong Wang;Rui-Chun Xiao;Huiying Liu;Zhaowei Zhang;Shen Lai;Chao Zhu;Hongbing Cai;Naizhou Wang;Shengyao Chen;Ya Deng;Zheng Liu;Shengyuan A.Yang;Wei-Bo Gao-College of Mathematics and Physics,Beijing University of Chemical Technology,Beijing 100029,China;Division of Physics and Applied Physics,School of Physical and Mathematical Sciences,Nanyang Technological University,Singapore 637371,Singapore;Institute of Physical Science and Information Technology,Anhui University,Hefei 230601,China;Research Laboratory for Quantum Materials,Singapore University of Technology and Design,Singapore 487372,Singapore;School of Materials Science and Engineering,Nanyang Technological University,Singapore 639798,Singapore;CAS Center for Excellence in Nanoscience,National Center for Nanoscience and Technology,Beijing 100190,China;The Photonics Institute and Centre for Disruptive Photonic Technologies,Nanyang Technological University,Singapore 637371,Singapore
Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature
Sai Li;Ao Du;Yadong Wang;Xinran Wang;Xueying Zhang;Houyi Cheng;Wenlong Cai;Shiyang Lu;Kaihua Cao;Biao Pan;Na Lei;Wang Kang;Junming Liu;Albert Fert;Zhipeng Hou;Weisheng Zhao-Fert Beijing Institute,MIIT Key Laboratory of Spintronics,School of Integrated Circuit Science and Engineering,Beihang University,Beijing 100191,China;Shenyuan Honors College,Beihang University,Beijing 100191,China;Beihang-Geortek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266104,China;Guangdong Provincial Key Laboratory of Optical Information Materials and Technology&Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China;Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 211102,China
机标中图分类号,由域田数据科技根据网络公开资料自动分析生成,仅供学习研究参考。