典型文献
A feasible and effective solution-processed PCBM electron extraction layer enabling the high Voc and efficient Cu2ZnSn(S,Se)4 devices
文献摘要:
Photo-generated carrier recombination loss at the CZTSSe/CdS front interface is a key issue to the open-circuit voltage(Voc)deficit of Cu2ZnSnSxSe4-x(CZTSSe)solar cells.Here,by the aid of an easy-handling spin-coating method,a thin PCBM([6,6]-phenyl-C61-butyric acid methyl ester)layer as an electron extraction layer has been introduced on the top of CdS buffer layer to modify CZTSSe/CdS/ZnO-ITO(In2O3:Sn)interfacial properties.Based on Sn4+/DMSO(dimethyl sulfoxide)solution system,a total-area efficiency of 12.87%with a Voc of 529 mV has been achieved.A comprehensive investigation on the influence of PCBM layer on carrier extraction,transportation and recombination processes has been carried out.It is found that the PCBM layer can smooth over the CdS film roughness,thus beneficial for a dense and flat window layer.Furthermore,this CZTSSe/CdS/PCBM heterostructure can accelerate carrier separation and extraction and block holes from the front interface as well,which is mainly ascribed to the downward band bending of the absorber and a widened space charge region.Our work provides a feasi-ble way to improve the front interfacial property and the cell performance of CZTSSe solar cells by the aid of organic interfacial materials.
文献关键词:
中图分类号:
作者姓名:
Licheng Lou;Yuancai Gong;Jiazheng Zhou;Jinlin Wang;Xiao Xu;Kang Yin;Biwen Duan;Huijue Wu;Jiangjian Shi;Yanhong Luo;Dongmei Li;Hao Xin;Qingbo Meng
作者机构:
Beijing National Laboratory for Condensed Matter Physics,Renewable Energy Laboratory,Institute of Physics,Chinese Academy of Sciences(CAS),Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory of Organic Electronics and Information Displays&Institute of Advanced Materials,Nanjing University of Posts&Telecommunications,Nanjing 210023,Jiangsu,China;Songshan Lake Materials Laboratory,Dongguan 523808,Guangdong,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
文献出处:
引用格式:
[1]Licheng Lou;Yuancai Gong;Jiazheng Zhou;Jinlin Wang;Xiao Xu;Kang Yin;Biwen Duan;Huijue Wu;Jiangjian Shi;Yanhong Luo;Dongmei Li;Hao Xin;Qingbo Meng-.A feasible and effective solution-processed PCBM electron extraction layer enabling the high Voc and efficient Cu2ZnSn(S,Se)4 devices)[J].能源化学,2022(07):154-161
A类:
Cu2ZnSnSxSe4
B类:
feasible,effective,solution,processed,PCBM,electron,extraction,layer,enabling,high,Voc,efficient,devices,Photo,generated,carrier,recombination,loss,CZTSSe,CdS,front,interface,key,issue,open,circuit,voltage,deficit,solar,cells,Here,by,aid,easy,handling,spin,coating,method,thin,phenyl,C61,butyric,acid,ester,has,been,introduced,top,buffer,modify,ZnO,ITO,In2O3,interfacial,properties,Based,Sn4+,DMSO,dimethyl,sulfoxide,system,total,area,efficiency,mV,achieved,comprehensive,investigation,influence,transportation,processes,carried,out,It,found,that,can,smooth,over,film,roughness,thus,beneficial,dense,flat,window,Furthermore,this,heterostructure,accelerate,separation,block,holes,from,well,which,mainly,ascribed,downward,band,bending,absorber,widened,space,charge,region,Our,work,provides,way,improve,property,performance,organic,materials
AB值:
0.583953
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