典型文献
Manipulating the morphology of CdS/Sb2S3 heterojunction using a Mg-doped tin oxide buffer layer for highly efficient solar cells
文献摘要：
Antimony sulfide(Sb2S3)is an appealing semiconductor as light absorber for solar cells due to its high absorption coefficient,appropriate band gap(～1.7 eV)and abundance of constituent elements.However,power conversion efficiency(PCE)of Sb2S3-based solar cells still lags much behind the theoret-ically predicted due to the imperfect energy level alignment at the charge transporting layer/Sb2S3 inter-faces and hence severe charge recombination.Herein,we insert a high-temperature sintered magnesium(Mg)-doped tin oxide(SnO2)layer between cadmium sulfide(CdS)and fluorine doped tin oxide to form a cascaded energy level alignment and thus mitigate interfacial charge recombination.Simultaneously,the inserted Mg-doped SnO2 buffer layer facilitates the growth of the neibouring CdS film with orientation followed by Sb2S3 film with larger grains and fewer pinholes.Consequently,the resultant Sb2S3 solar cells with Mg-doped SnO2 deliver a champion PCE of 6.31％,22.8％higher than those without a buffer layer.Our work demonstrates that deliberate absorber growth as well as efficient hole blocking upon an appro-priate buffer layer is viable in obtaining solution-processed Sb2S3 solar cells with high performance.
文献关键词：
中图分类号：
作者姓名：
Jiashuai Li;Liangbin Xiong;Xuzhi Hu;Jiwei Liang;Cong Chen;Feihong Ye;Jing Li;Yongjie Liu;Wenlong Shao;Ti Wang;Chen Tao;Guojia Fang
作者机构：
Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education of China,School of Physics and Technology,Wuhan University,Wuhan 430072,Hubei,China;Shenzhen Institute,Wuhan University,Shenzhen 518055,Guangdong,China;School of Optoelectronic Engineering,Guangdong Polytechnic Normal University,Guangzhou 510665,Guangdong,China
文献出处：
引用格式：
[1]Jiashuai Li;Liangbin Xiong;Xuzhi Hu;Jiwei Liang;Cong Chen;Feihong Ye;Jing Li;Yongjie Liu;Wenlong Shao;Ti Wang;Chen Tao;Guojia Fang-.Manipulating the morphology of CdS/Sb2S3 heterojunction using a Mg-doped tin oxide buffer layer for highly efficient solar cells)[J].能源化学,2022(03):374-381
A类：
neibouring
B类：
Manipulating,morphology,CdS,Sb2S3,heterojunction,using,Mg,doped,oxide,buffer,layer,highly,solar,cells,Antimony,sulfide,is,appealing,semiconductor,light,absorber,due,its,absorption,coefficient,appropriate,band,gap,eV,abundance,constituent,elements,However,power,conversion,efficiency,PCE,still,lags,much,behind,theoret,ically,predicted,imperfect,energy,level,alignment,charge,transporting,faces,hence,severe,recombination,Herein,temperature,sintered,magnesium,SnO2,between,cadmium,fluorine,cascaded,thus,mitigate,interfacial,Simultaneously,inserted,facilitates,growth,film,orientation,followed,by,larger,grains,fewer,pinholes,Consequently,resultant,deliver,champion,higher,than,those,without,Our,work,demonstrates,that,deliberate,well,blocking,upon,viable,obtaining,solution,processed,performance
AB值：
0.554041
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