典型文献
Review of Technologies for High-Voltage Integrated Circuits
文献摘要：
High-Voltage power Integrated Circuits(HVICs)are widely used to realize high-efficiency power conversions(e.g.,AC/DC conversion),gate drivers for power devices and LED lighting,and so on.The Bipolar-CMOS-DMOS(BCD)process is proposed to fabricate devices with bipolar,CMOS,and DMOS modes,and thereby realize the single-chip integration of HVICs.The basic integrated technologies of HVICs include High-Voltage(HV)integrated device technology,HV interconnection technology,and isolation technology.The HV integrated device is the core of HVICs.The basic requirements of the HV integrated device are high breakdown voltage,low specific on-resistance,and process compatibility with low-voltage circuits.The REduced SURFace field(RESURF)technology and junction termination technology are developed to optimize the surface field of integration power devices and breakdown voltage.Furthermore,the ENhanced Dlelectric layer Field(ENDIF)and REduced BULk Field(REBULF)technologies are proposed to optimize bulk fields.The double/triple RESURF technologies are further developed,and the superjunction concept is introduced to integrated power devices and to reduce the specific on-resistance.This work presents a comprehensive review of these technologies,including the innovation technologies of the authors'group,such as ENDIF and REBULF,substrate termination technology prospective integrated technologies and HVICs in wide band gap semiconductor materials are also discussed.
文献关键词：
中图分类号：
作者姓名：
Bo Zhang;Wentong Zhang;Le Zhu;Jian Zu;Ming Qiao;Zhaoji Li
作者机构：
State Key Laboratory of Electronic Thin Films and Integrated Devices,and School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China
文献出处：
引用格式：
[1]Bo Zhang;Wentong Zhang;Le Zhu;Jian Zu;Ming Qiao;Zhaoji Li-.Review of Technologies for High-Voltage Integrated Circuits)[J].清华大学学报自然科学版（英文版）,2022(03):495-511
A类：
HVICs,REduced,SURFace,RESURF,ENhanced,Dlelectric,ENDIF,BULk,REBULF,superjunction
B类：
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AB值：
0.404459
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