Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm to 280 nm) photodetection. In its amorphous form, amorphous gallium oxide (a-Ga2O3) maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature, thus it is compatible with Si integrated circuits (ICs) technology. Herein, the a-Ga2O3 film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition (PE-ALD) at a growth temperature of 250 ℃. The stoichiometric a-Ga2O3 thin film with a low defect density is achieved owing to the mild PE-ALD condition. As a result, the fabricated Au/a-Ga2O3/Au photodetector shows a fast time response, high responsivity, and excellent wavelength selectivity for solar-blind photodetection. Furthermore, an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga2O3/Au interface, resulting in the responsivity of 788 A/W (under 254 nm at 10 V), a 250-nm-to-400-nm rejection ratio of 9.2×103, and the rise time and the decay time of 32 ms and 6 ms, respectively. These results demonstrate that the a-Ga2O3 film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.

Ze-Yu Fan;Min-Ji Yang;Bo-Yu Fan;Andraž Mavrič;Nadiia Pastukhova;Matjaz Valant;Bo-Lin Li;Kuang Feng;Dong-Liang Liu;Guang-Wei Deng;Qiang Zhou;Yan-Bo Li

Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 610054;Materials Research Laboratory,University of Nova Gorica,Nova Gorica SI-5000;Yangtza Delta Region Institute(Huzhou),University of Electronic Science and Technology of China,Huzhou 313001

电子科技学刊

[1]Ze-Yu Fan;Min-Ji Yang;Bo-Yu Fan;Andraž Mavrič;Nadiia Pastukhova;Matjaz Valant;Bo-Lin Li;Kuang Feng;Dong-Liang Liu;Guang-Wei Deng;Qiang Zhou;Yan-Bo Li-.Plasma-Enhanced Atomic Layer Deposition of Amorphous Ga2O3 for Solar-Blind Photodetection)[J].电子科技学刊,2022(04):331-344

Photodetection

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