首站-论文投稿智能助手
典型文献
Indium-Gallium-Zinc-Oxide-Based Photoelectric Neuromorphic Transistors for Spiking Morse Coding
文献摘要:
The human brain that relies on neural networks communicated by spikes is featured with ultralow energy con-sumption,which is more robust and adaptive than any digital system.Inspired by the spiking framework of the brain,spike-based neuromorphic systems have recently inspired intensive attention.Therefore,neuromorphic devices with spike-based synaptic functions are considered as the first step toward this aim.Photoelectric neu-romorphic devices are promising candidates for spike-based synaptic devices with low latency,broad bandwidth,and superior parallelism.Here,the indium-gallium-zinc-oxide-based photoelectric neuromorphic transistors are fabricated for Morse coding based on spike processing,405-nm light spikes are used as synaptic inputs,and some essential synaptic plasticity,including excitatory postsynaptic current,short-term plasticity,and high-pass filtering,can be mimicked.More interestingly,Morse codes encoded by light spikes are decoded using our devices and translated into amplitudes.Furthermore,such devices are compatible with standard integrated processes suitable for large-scale integrated neuromorphic systems.
文献关键词:
作者姓名:
Xinhuang Lin;Haotian Long;Shuo Ke;Yuyuan Wang;Ying Zhu;Chunsheng Chen;Changjin Wan;Qing Wan
作者机构:
School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China
引用格式:
[1]Xinhuang Lin;Haotian Long;Shuo Ke;Yuyuan Wang;Ying Zhu;Chunsheng Chen;Changjin Wan;Qing Wan-.Indium-Gallium-Zinc-Oxide-Based Photoelectric Neuromorphic Transistors for Spiking Morse Coding)[J].中国物理快报(英文版),2022(06):69-72
A类:
romorphic
B类:
Indium,Gallium,Zinc,Oxide,Based,Photoelectric,Neuromorphic,Transistors,Spiking,Morse,Coding,human,brain,that,relies,neural,networks,communicated,by,spikes,featured,ultralow,energy,sumption,which,robust,adaptive,than,any,digital,Inspired,spiking,framework,neuromorphic,systems,have,recently,inspired,intensive,attention,Therefore,devices,functions,are,considered,first,step,toward,this,aim,promising,candidates,latency,broad,bandwidth,superior,parallelism,Here,indium,gallium,zinc,oxide,photoelectric,transistors,fabricated,coding,processing,light,used,inputs,some,essential,plasticity,including,excitatory,postsynaptic,current,short,term,high,pass,filtering,be,mimicked,More,interestingly,codes,encoded,decoded,using,our,translated,into,amplitudes,Furthermore,such,compatible,standard,integrated,processes,suitable,large,scale
AB值:
0.648562
相似文献
CRISPR-Cas12a-Empowered Electrochemical Biosensor for Rapid and Ultrasensitive Detection of SARS-CoV-2 Delta Variant
Chenshuo Wu;Zhi Chen;Chaozhou Li;Yabin Hao;Yuxuan Tang;Yuxuan Yuan;Luxiao Chai;Taojian Fan;Jiangtian Yu;Xiaopeng Ma;Omar A.Al-Hartomy;S.Wageh;Abdullah G.Al-Sehemi;Zhiguang Luo;Yaqing He;Jingfeng Li;Zhongjian Xie;Han Zhang-International Collaborative Laboratory of 2D,Materials for Optoelectronics Science and Technology of Ministry of Education,Institute of Microscale Optoelectronics,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,People's Republic of China;Hospital of Guangzhou Medical University,Qingyuan city People's Hospital,Qingyuan 511518,People's Republic of China;Shenzhen Han's Tech Limited Company,Shenzhen 518000,People's Republic of China;Shenzhen International Institute for Biomedical Research,Shenzhen 518116,People's Republic of China;Department of Respiratory,Shenzhen Children's Hospital,Shenzhen 518038,People's Republic of China;Department of Physics,Faculty of Science,King Abdulaziz University,Jeddah 21589,Saudi Arabia;Research Center for Advanced Materials Science(RCAMS),King Khalid University,P.O.Box 9004,Abha 61413,Saudi Arabia;Department of Chemistry,College of Science,King Khalid University,P.O.Box 9004,Abha 61413,Saudi Arabia;Zhongmin(Shenzhen)Intelligent Ecology Co.,Ltd,Shenzhen 518055,People's Republic of China;Shenzhen Center for Disease Control and Prevention,Shenzhen 518055,People's Republic of China;Institute of Pediatrics,Shenzhen Children's Hospital,Shenzhen 518038,People's Republic of China
High-Transconductance,Highly Elastic,Durable and Recyclable All-Polymer Electrochemical Transistors with 3D Micro-Engineered Interfaces
Wenjin Wang;Zhaoxian Li;Mancheng Li;Lvye Fang;Fubin Chen;Songjia Han;Liuyuan Lan;Junxin Chen;Qize Chen;Hongshang Wang;Chuan Liu;Yabin Yang;Wan Yue;Zhuang Xie-School of Materials Science and Engineering,Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices and Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education,Sun Yat-Sen University,Guangzhou 510275,People's Republic of China;State Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology,School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510275,People's Republic of China
机标中图分类号,由域田数据科技根据网络公开资料自动分析生成,仅供学习研究参考。