典型文献
The application of a helicon plasma source in reactive sputter deposition of tungsten nitride thin films
文献摘要：
A reactive helicon wave plasma(HWP)sputtering method is used for the deposition of tungsten nitride(WNx)thin films.N2 is introduced downstream in the diffusion chamber.The impacts of N2 on the Ar-HWP parameters,such as ion energy distribution functions(IEDFs),electron energy probability functions(EEPFs),electron temperature(Te)and density(ne),are investigated.With the addition of N2,a decrease in electron density is observed due to the dissociative recombination of electrons with N2+.The similar IEDF curves of Ar+and N2+indicate that the majority of N2+stems from the charge transfer in the collision between Ar+and N2.Moreover,due to the collisions between electrons and N2 ions,EEPFs show a relatively lower Te with a depletion in the high-energy tail.With increasing negative bias from 50 to 200 V,a phase transition from hexagonal WN to fcc-WN0.5 is observed,together with an increase in the deposition rate and roughness.
文献关键词：
中图分类号：
作者姓名：
Yan YANG;Peiyu JI;Maoyang LI;Yaowei YU;Jianjun HUANG;Bin YU;Xuemei WU;Tianyuan HUANG
作者机构：
College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,People's Republic of China;Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,People's Republic of China;Advanced Energy Research Center,Shenzhen University,Shenzhen 518060,People's Republic of China;School of Optoelectronic Science and Engineering,Soochow University,Suzhou 215123,People's Republic of China;School of Physical Science and Technology,Soochow University,Suzhou 215123,People's Republic of China;Institute of Plasma Physics,Chinese Academy of Sciences,Hefei 230031,People's Republic of China
文献出处：
引用格式：
[1]Yan YANG;Peiyu JI;Maoyang LI;Yaowei YU;Jianjun HUANG;Bin YU;Xuemei WU;Tianyuan HUANG-.The application of a helicon plasma source in reactive sputter deposition of tungsten nitride thin films)[J].等离子体科学和技术（英文版）,2022(06):157-163
A类：
helicon,WNx,IEDFs,EEPFs,N2+,IEDF,Ar+and,N2+indicate,N2+stems,WN0
B类：
application,plasma,source,reactive,deposition,tungsten,nitride,thin,films,wave,HWP,sputtering,method,used,introduced,downstream,diffusion,chamber,impacts,parameters,such,energy,distribution,functions,probability,temperature,Te,density,are,investigated,With,addition,decrease,observed,due,dissociative,recombination,electrons,similar,curves,that,majority,from,charge,transfer,between,Moreover,collisions,show,relatively,lower,depletion,high,tail,increasing,negative,bias,phase,transition,hexagonal,fcc,together,increase,rate,roughness
AB值：
0.427306
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机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
