典型文献
Effects of Sm Doping to Improve the Thermoelectric Properties of ZnO Ceramics
文献摘要：
A series of Sm doped ZnO based thermoelectric materials were prepared by mechanical alloying and spark plasma sintering. The effects of Sm doping on ZnO based thermoelectric materials were systematically studied by means of electrical and thermal properties tests combined with first principles calculations of energy band, density of states and elastic constants. The experimental results show that the substitution of Sm at Zn site could cause the valence band and conduction band moving down, and the 4f orbitals of Sm could contribute to the increase of the density of states near the Fermi level, corresponding to the increase of carrier concentration and electrical conductivity. The substitution of Sm at Zn site could cause the decrease of effective mass and Seebeck coefficient. The substitution of Sm at Zn site could lead to the decrease of Young's modulus and lattice thermal conductivity, which contribute to the decrease of thermal conductivity. Finally, the highest dimensionless thermoelectric figure of merit (ZT) value has been increased to 0.346, which is 3.48 times as pristine ZnO.
文献关键词：
中图分类号：
作者姓名：
FENG Bo;MAO Wentao
作者机构：
School of Mechanical and Electrical Engineering,Wuhan Donghu University,Wuhan 430070,China;Institute of Engineering and Technology,Hubei University of Science and Technology,Xianning 437100,China
文献出处：
引用格式：
[1]FENG Bo;MAO Wentao-.Effects of Sm Doping to Improve the Thermoelectric Properties of ZnO Ceramics)[J].武汉理工大学学报（材料科学版）（英文版）,2022(06):1166-1171
A类：
B类：
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AB值：
0.580563
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