典型文献
A gauge theory for two-band model of Chern insulators and induced topological defects
文献摘要：
In this paper a gauge theory is proposed for the two-band model of Chem insulators.Based on the so-called 't Hooft monopole model,a U(1) Maxwell electromagnetic sub-field is constructed from an SU(2) gauge field,from which arise two types of topological defects,monopoles and e2 merons.We focus on the topological number in the Hall conductance σxy =e2/h-C,where C is the Chern number.It is discovered that in the monopole case C is indeterminate,while in the meron case C takes different values,due to a varying on-site energy m.As a typical example,we apply this method to the square lattice and compute the winding numbers (topological charges) of the defects;the C-evaluations we obtain reproduce the results of the usual literature.Furthermore,based on the gauge theory we propose a new model to obtain the high Chem numbers |C| =2,4.
文献关键词：
中图分类号：
作者姓名：
Zhi-Wen Chang;Wei-Chang Hao;Xin Liu
作者机构：
Institute of Theoretical Physics,Faculty of Sciences,Beijing University of Technology,Beijing 100124,China;School of Physics,Beihang University,Beijing 100191,China
文献出处：
引用格式：
[1]Zhi-Wen Chang;Wei-Chang Hao;Xin Liu-.A gauge theory for two-band model of Chern insulators and induced topological defects)[J].理论物理,2022(01):124-133
A类：
Hooft,monopoles,merons,meron
B类：
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AB值：
0.507007
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