典型文献
Single silicon waveguide MRR based Fano resonance in the whole spectral bands
文献摘要：
To improve the integration of Fano devices,we design a T-shaped waveguide coupling micro-ring resonator(MRR)structure to achieve a single cavity with Fano resonance in the whole spectral bands.The mathematical relationship between the phase factor,the coupling coefficient of the bus waveguide,and the Fano resonance slope extinction ratio(ER)is established.The electron beam exposure process is used to obtain a device with an insertion loss of-3 dB.The maximum ER of the Fano lineshape exceeds 15 dB,and the slope ratio(SR)is 251.3 dB/nm.This design improves the compactness of the Fano resonant device.
文献关键词：
中图分类号：
作者姓名：
LU Lidan;WANG Shuai;ZENG Zhoumo;DONG Mingli;ZHU Lianqing
作者机构：
School of Instrument Science and Opto Electronics Engineering,Beijing Information Science and Technology Uni-versity,Beijing 100016,China;Department of Precision Instrument Engineering,Tianjin University,Tianjin 300072,China
文献出处：
引用格式：
[1]LU Lidan;WANG Shuai;ZENG Zhoumo;DONG Mingli;ZHU Lianqing-.Single silicon waveguide MRR based Fano resonance in the whole spectral bands)[J].光电子快报（英文版）,2022(07):398-403
A类：
B类：
Single,silicon,waveguide,MRR,Fano,resonance,whole,spectral,bands,To,integration,devices,design,shaped,coupling,micro,ring,resonator,structure,achieve,single,cavity,mathematical,relationship,between,phase,coefficient,bus,slope,extinction,ER,established,electron,beam,exposure,process,used,obtain,insertion,loss,dB,maximum,lineshape,exceeds,SR,This,improves,compactness,resonant
AB值：
0.53427
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