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典型文献
Plasma-enabled electrochemical jet micromachining of chemically inert and passivating material
文献摘要:
Electrochemical jet machining(EJM)encounters significant challenges in the microstructuring of chemically inert and passivating materials because an oxide layer is easily formed on the material surface,preventing the progress of electrochemical dissolution.This research demonstrates for the first time a jet-electrolytic plasma micromachining(Jet-EPM)method to overcome this problem.Specifically,an electrolytic plasma is intentionally induced at the jet-material contact area by applying a potential high enough to surmount the surface boundary layer(such as a passive film or gas bubble)and enable material removal.Compared to traditional EJM,introducing plasma in the electrochemical jet system leads to considerable differences in machining performance due to the inclusion of plasma reactions.In this work,the implementation of Jet-EPM for fabricating microstructures in the semiconductor material 4H-SiC is demonstrated,and the machining principle and characteristics of Jet-EPM,including critical parameters and process windows,are comprehensively investigated.Theoretical modeling and experiments have elucidated the mechanisms of plasma ignition/evolution and the corresponding material removal,showing the strong potential of Jet-EPM for micromachining chemically resistant materials.The present study considerably augments the range of materials available for processing by the electrochemical jet technique.
文献关键词:
作者姓名:
Jiajun Lu;Shunda Zhan;Bowen Liu;Yonghua Zhao
作者机构:
Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen 518055,People's Republic of China
引用格式:
[1]Jiajun Lu;Shunda Zhan;Bowen Liu;Yonghua Zhao-.Plasma-enabled electrochemical jet micromachining of chemically inert and passivating material)[J].极端制造(英文),2022(04):214-233
A类:
EJM,microstructuring
B类:
Plasma,enabled,electrochemical,jet,micromachining,chemically,inert,passivating,Electrochemical,encounters,significant,challenges,materials,because,oxide,layer,easily,formed,surface,preventing,progress,dissolution,This,research,demonstrates,first,electrolytic,plasma,Jet,EPM,method,overcome,this,problem,Specifically,intentionally,induced,contact,area,by,applying,potential,high,enough,surmount,boundary,such,passive,film,gas,bubble,removal,Compared,traditional,introducing,system,leads,considerable,differences,performance,due,inclusion,reactions,In,work,implementation,fabricating,microstructures,semiconductor,4H,SiC,demonstrated,principle,characteristics,including,critical,parameters,windows,comprehensively,investigated,Theoretical,modeling,experiments,have,elucidated,mechanisms,ignition,evolution,corresponding,showing,strong,resistant,present,study,considerably,augments,range,available,processing,technique
AB值:
0.543582
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