典型文献
Bi and S Co-doping g-C3N4 to Enhance Internal Electric Field for Robust Photocatalytic Degradation and H2 Production
文献摘要：
By adjusting the type and proportion of doping elements in the g-C3N4-based photocatalyst, the internal electric field (IEF) strength of the semiconductor can be regulated. This can effectively enhance the driving force of charge separation in the photocatalytic process. It is found that the introduction of appropriate concentra-tion of Bi and S into the skeleton structure of g-C3N4 can achieve efficient degradation of tetracycline (TC) and other pollutants in the liquid environment and excellent pho-tocatalytic H2 evolution performance (1139 μmol·L-1·h-1). Since the prepared samples have similar crystal structures, the relative strength of IEF can be calculated. It can be used as the basis for adjusting the IEF strength of g-C3N4-based semiconductor by element doping. In addition, the Bi and S co-doped g-C3N4 samples after solvothermalreflux show good chemical stability and can reduce the nanostructure defects caused by co-doping of heteroatoms, thus it provides a novel solution for the construction of g-C3N4-based dual-function photocatalyst with high activity and stability.
文献关键词：
中图分类号：
作者姓名：
Yan Hu;Xibao Li;Weiwei Wang;Fang Deng;Lu Han;Xiaoming Gao;Zhijun Feng;Zhi Chen;Juntong Huang;Fanyan Zeng;Fan Dong
作者机构：
School of Materials Science and Engineering,Nanchang Hangkong University,Nanchang 330063,China;Key Laboratory of Jiangxi Province for Persistent Pollutants Control and Resources Recycle,Nanchang Hangkong University,Nanchang 330063,China;School of Materials and Metallurgy,University of Science and Technology,Anshan,Liaoning 114051,China;Department of Chemistry and Chemical Engineering,Shaanxi Key Laboratory of Chemical Reaction Engineering,Yan'an University,Yan'an 716000,China;Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 611731,China
文献出处：
引用格式：
[1]Yan Hu;Xibao Li;Weiwei Wang;Fang Deng;Lu Han;Xiaoming Gao;Zhijun Feng;Zhi Chen;Juntong Huang;Fanyan Zeng;Fan Dong-.Bi and S Co-doping g-C3N4 to Enhance Internal Electric Field for Robust Photocatalytic Degradation and H2 Production)[J].结构化学,2022(06):69-78
A类：
solvothermalreflux
B类：
Bi,Co,doping,C3N4,Enhance,Internal,Electric,Field,Robust,Photocatalytic,Degradation,H2,Production,By,adjusting,type,proportion,elements,photocatalyst,internal,electric,field,IEF,strength,semiconductor,can,be,regulated,This,effectively,enhance,driving,force,charge,separation,photocatalytic,process,It,found,that,introduction,appropriate,concentra,into,skeleton,achieve,efficient,degradation,tetracycline,pollutants,liquid,environment,excellent,evolution,performance,Since,prepared,samples,have,similar,crystal,structures,relative,calculated,basis,by,addition,doped,after,show,good,chemical,stability,reduce,nanostructure,defects,caused,heteroatoms,thus,provides,novel,solution,construction,dual,function,high,activity
AB值：
0.572928
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