典型文献
Mild fabrication of SiC/C nanosheets with prolonged cycling stability as supercapacitor
文献摘要：
A facile and mild route to synthesize C-coated SiC nanosheets(SiC/C NSs)via wet-chemical etching in hydrofluoric acid(HF)at 60℃for 48 h using carbon aluminum silicate(Al4SiC4)as raw materials is reported for the first time.HF molecule leads to the breaking of C-Al bonds in Al4SiC4,which even-tually results in the formation of two-dimensional SiC nanosheets.A carbon layer with a thickness of approximately 1.5 nm is formed on the surface of SiC nanosheets due to the excess carbon.The prepared SiC/C NSs possess a smooth and rectangular sheet with a mean 150 nm in width,500 nm in length and 10 nm in thickness,respectively.The crystallographic characterization indicates that 3C-SiC and 2H-SiC coexist and the parallel plane relationship of 3C/2H-SiC heterojunction is(111)3C-SiC//(001)2H-SiC.Due to the formed 3C-SiC/2H-SiC heterojunction and graphitic carbon,the fabricated electrode based on SiC/C NSs exhibits prolonged cycling stability and high specific areal capacitance as a promising supercapacitor candidate.It remains 91.2％retention even after 20,000 cycles and 734 μF/cm2 at a scan rate of 10 mV/s.
文献关键词：
中图分类号：
作者姓名：
Shuang Liu;Enhui Wang;Shichun Liu;Chunyu Guo;Hailong Wang;Tao Yang;Xinmei Hou
作者机构：
Beijing Advanced Innovation Center for Materials Genome Engineering,Collaborative Innovation Center of Steel Technology,University of Science and Technology Beijing,Beijing 100083,China;School of Materials Science Engineering,Zhengzhou University,Zhengzhou 450001,China
文献出处：
引用格式：
[1]Shuang Liu;Enhui Wang;Shichun Liu;Chunyu Guo;Hailong Wang;Tao Yang;Xinmei Hou-.Mild fabrication of SiC/C nanosheets with prolonged cycling stability as supercapacitor)[J].材料科学技术（英文版）,2022(15):178-186
A类：
hydrofluoric
B类：
Mild,fabrication,nanosheets,prolonged,cycling,stability,supercapacitor,facile,mild,route,synthesize,coated,NSs,via,wet,chemical,etching,acid,HF,using,carbon,aluminum,silicate,Al4SiC4,raw,materials,reported,first,molecule,leads,breaking,bonds,which,even,tually,results,formation,two,dimensional,layer,thickness,approximately,formed,surface,due,excess,prepared,possess,smooth,rectangular,mean,width,length,respectively,crystallographic,characterization,indicates,that,3C,2H,coexist,parallel,plane,relationship,heterojunction,Due,graphitic,fabricated,electrode,exhibits,high,specific,areal,capacitance,promising,candidate,It,remains,retention,after,cycles,scan,rate,mV
AB值：
0.554005
相似文献
机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
