典型文献
Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range
文献摘要：
Nonpolar(11(2)0)plane InxGa1-xN epilayers comprising the entire In content(x)range were successfully grown on nanoscale GaN islands by metal-organic chemical vapor deposition.The structural and optical properties were studied intensively.It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33,even though the crystalline quality was gradually declined,which was accompanied by the appearance of phase separation in the InxGa1-xN layer.Photoluminescence wavelengths of 478 and 674 nm for blue and red light were achieved for x varied from 0.06 to 0.33.Furthermore,the corresponding average lifetime(τ1/e)of carriers for the nonpolar InGaN film was decreased from 406 ps to 267 ps,indicating that a high-speed modulation bandwidth can be expected for nonpolar InGaN-based light-emitting diodes.Moreover,the bowing coefficient(b)of the(11(2)0)plane InGaN was determined to be 1.91 eV for the bandgap energy as a function of x.
文献关键词：
中图分类号：
作者姓名：
Jianguo Zhao;Kai Chen;Maogao Gong;Wenxiao Hu;Bin Liu;Tao Tao;Yu Yan;Zili Xie;Yuanyuan Li;Jianhua Chang;Xiaoxuan Wang;Qiannan Cui;Chunxiang Xu;Rong Zhang
作者机构：
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;School of Electronics and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China;State Key Laboratory of Bioelectronics,School of Biological Science and Medical Engineering,Southeast University,Nanjing 210096,China;Xiamen University,Xiamen 361000,China
文献出处：
引用格式：
[1]Jianguo Zhao;Kai Chen;Maogao Gong;Wenxiao Hu;Bin Liu;Tao Tao;Yu Yan;Zili Xie;Yuanyuan Li;Jianhua Chang;Xiaoxuan Wang;Qiannan Cui;Chunxiang Xu;Rong Zhang-.Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range)[J].中国物理快报（英文版）,2022(04):115-119
A类：
Nonpolar,epilayers
B类：
Epitaxial,Growth,Characteristics,Plane,InGaN,Films,Blue,Green,Red,Emission,Entire,Content,Range,plane,InxGa1,xN,comprising,entire,content,range,were,successfully,grown,nanoscale,islands,by,metal,organic,chemical,vapor,deposition,structural,optical,properties,studied,intensively,It,was,found,that,surface,morphology,gradually,smoothed,when,increased,from,even,though,crystalline,quality,declined,which,accompanied,appearance,phase,separation,Photoluminescence,wavelengths,blue,red,light,achieved,varied,Furthermore,corresponding,average,lifetime,carriers,nonpolar,film,decreased,ps,indicating,high,speed,modulation,bandwidth,can,be,expected,emitting,diodes,Moreover,bowing,coefficient,determined,eV,bandgap,energy,function
AB值：
0.659763
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