典型文献
N-polar InGaN nanowires:breaking the efficiency bottleneck of nano and micro LEDs
文献摘要：
The efficiency of conventional quantum well light-emitting diodes(LEDs)decreases drastically with reducing areal size.Here we show that such a critical size scaling issue of LEDs can be addressed by utilizing N-polar InGaN nanowires.We studied the epitaxy and performance characteristics of N-polar InGaN nanowire LEDs grown on sapphire substrate by plasma-assisted molecular beam epitaxy.A maximum external quantum efficiency～11％was measured for LEDs with lateral dimensions as small as 750 nm directly on wafer without any pack-aging.The effect of electron overflow and Auger recombination on the device performance is also studied.This work provides a viable approach for achieving high-efficiency nano and micro LEDs that were not previously possible.
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作者姓名：
XIANHE LIU;YI SUN;YAKSHITA MALHOTRA;AYUSH PANDEY;PING WANG;YUANPENG WU;KAI SUN;ZETIAN MI
作者机构：
Department of Electrical Engineering and Computer Science,University of Michigan,Ann Arbor,Michigan 48109,USA;Guangzhou Institute of Technology,Xidian University,Guangzhou 510555,China;Department of Materials Science and Engineering,University of Michigan,Ann Arbor,Michigan 48109,USA
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引用格式：
[1]XIANHE LIU;YI SUN;YAKSHITA MALHOTRA;AYUSH PANDEY;PING WANG;YUANPENG WU;KAI SUN;ZETIAN MI-.N-polar InGaN nanowires:breaking the efficiency bottleneck of nano and micro LEDs)[J].光子学研究（英文）,2022(02):587-593
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0.642574
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