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典型文献
Realizing quinary charge states of solitary defects in two-dimensional intermetallic semiconductor
文献摘要:
Creating and manipulating multiple charge states of solitary defects in semiconductors is of essential importance for solitary defect electronics,but is fundamentally limited by Coulomb's law.Achieving this objective is challenging,due to the conflicting requirements of the localization necessary for the sizable band gap and delocalization necessary for a low charging energy.Here,using scanning tunneling microscopy/spectroscopy experiments and first-principles calculations,we realized exotic quinary charge states of solitary defects in two-dimensional intermetallic semiconductor Sn2Bi.We also observed an ultralow defect charging energy that increases sublinearly with charge number rather than displaying the usual quadratic behavior.Our work suggests a promising route for constructing multiple defect-charge states by designing intermetallic semiconductors,and opens new opportunities for developing quantum devices with charge-based quantum states.
文献关键词:
作者姓名:
Jian Gou;Bingyu Xia;Xuguang Wang;Peng Cheng;Andrew Thye Shen Wee;Wenhui Duan;Yong Xu;Kehui Wu;Lan Chen
作者机构:
Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physics,University of Chinese Academy of Sciences,Beijing 100049,China;Department of Physics,National University of Singapore,Singapore 117542,Singapore;State Key Laboratory of Low-Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China;Institute for Advanced Study,Tsinghua University,Beijing 100084,China;Collaborative Innovation Center of Quantum Matter,Beijing 100871,China;RIKEN Center for Emergent Matter Science(CEMS),Wako,Saitama 351-0198,Japan;Songshan Lake Materials Laboratory,Dongguan 523808,China
引用格式:
[1]Jian Gou;Bingyu Xia;Xuguang Wang;Peng Cheng;Andrew Thye Shen Wee;Wenhui Duan;Yong Xu;Kehui Wu;Lan Chen-.Realizing quinary charge states of solitary defects in two-dimensional intermetallic semiconductor)[J].国家科学评论(英文版),2022(02):58-64
A类:
Sn2Bi,sublinearly
B类:
Realizing,quinary,charge,states,solitary,defects,two,dimensional,intermetallic,Creating,manipulating,multiple,semiconductors,essential,importance,electronics,but,fundamentally,limited,by,Coulomb,law,Achieving,this,objective,challenging,due,conflicting,requirements,necessary,sizable,band,gap,delocalization,charging,energy,Here,using,scanning,tunneling,microscopy,spectroscopy,experiments,first,principles,calculations,we,realized,exotic,We,also,observed,ultralow,that,increases,number,rather,than,displaying,usual,quadratic,behavior,Our,work,suggests,promising,route,constructing,designing,opens,new,opportunities,developing,quantum,devices
AB值:
0.597017
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