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典型文献
Body Bias Dependence of Bias Temperature Instability(BTI)in Bulk FinFET Technology
文献摘要:
1.Introduction With device continuously scaling,the bias temperature instability(BTI)has become the critical reliability issue.[1-3]Since the design margin of circuits is getting smaller at the end of life,the reliability assessment needs to be as accurate as possible.In practical circuit design,the device body is biased in some cases(i.e.,Vb ≠ 0).
文献关键词:
作者姓名:
Jiayang Zhang;Zirui Wang;Runsheng Wang;Zixuan Sun;Ru Huang
作者机构:
Institute of Microelectronics,Peking University,Beijing 100871,China
引用格式:
[1]Jiayang Zhang;Zirui Wang;Runsheng Wang;Zixuan Sun;Ru Huang-.Body Bias Dependence of Bias Temperature Instability(BTI)in Bulk FinFET Technology)[J].能源与环境材料(英文),2022(04):1200-1203
A类:
B类:
Body,Bias,Dependence,Temperature,Instability,BTI,Bulk,FinFET,Technology,Introduction, With,device,continuously,scaling,temperature,instability,has,become,critical,reliability,issue,Since,design,margin,circuits,getting,smaller,life,assessment,needs,accurate,possible,practical,body,biased,some,cases,Vb
AB值:
0.687817
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