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Double Side Interfacial Optimization for Low-Temperature Stable CsPbl2Br Perovskite Solar Cells with High Efficiency Beyond 16%
文献摘要:
CsPbl2Br perovskite solar cells have achieved rapid development owing to their exceptional optoelectronic properties and relatively outstanding stability.However,open-circuit voltage(Voc)loss caused by band mismatch and charge recombination between perovskite and charge transporting layer is one of the crucial obstacles to further improve the device performance.Here,we proposed a bilayer electron transport layer ZnO(bottom)/SnO2(top)to reduce the Voc loss(Eloss)and promote device Voc by ZnO insert layer thickness modulation,which could improve the efficiency of charge carrier extraction/transfer and suppress the charge carrier recombination.In addition,guanidinium iodide top surface treatment is used to further reduce the trap density,stabilize the perovskite film and align the energy levels,which promotes the fill factor,short-circuit current density(Jsc),and stability of the device.As a result,the champion cell of double-side optimized CsPbl2Br perovskite solar cells exhibits an extraordinary efficiency of 16.25%with the best Voc as high as 1.27 V and excellent thermal and storage stability.
文献关键词:
作者姓名:
Jing Ma;Jie Su;Zhenhua Lin;Jian He;Long Zhou;Tao Li;Jincheng Zhang;Shengzhong Liu;Jingjing Chang;Yue Hao
作者机构:
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Shaanxi Joint Key Laboratory of Graphene,School of Microelectronics,Xidian University,Xi'an 710071,China;Centre for Spintronics and Quantum System,State Key Laboratory for Mechanical Behavior of Materials,School of Materials Science and Engineering,Xi'an Jiaotong University,Xi'an 710049,China;Advanced Interdisciplinary Research Center for Flexible Electronics,Xidian University,Xi'an 710071,China;Key Laboratory of Applied Surface and Colloid Chemistry,National Ministry of Education Shaanxi Engineering Lab for Advanced Energy Technology,School of Materials Science and Engineering,Shaanxi Normal University,Xi'an 710119,China
引用格式:
[1]Jing Ma;Jie Su;Zhenhua Lin;Jian He;Long Zhou;Tao Li;Jincheng Zhang;Shengzhong Liu;Jingjing Chang;Yue Hao-.Double Side Interfacial Optimization for Low-Temperature Stable CsPbl2Br Perovskite Solar Cells with High Efficiency Beyond 16%)[J].能源与环境材料(英文),2022(02):637-644
A类:
guanidinium
B类:
Double,Side,Interfacial,Optimization,Low,Temperature,Stable,CsPbl2Br,Perovskite,Solar,Cells,High,Efficiency,Beyond,perovskite,solar,cells,have,achieved,rapid,development,owing,their,exceptional,optoelectronic,properties,relatively,outstanding,stability,However,open,circuit,voltage,Voc,caused,by,band,mismatch,charge,recombination,between,transporting,one,crucial,obstacles,further,improve,device,performance,Here,proposed,bilayer,ZnO,bottom,SnO2,top,reduce,Eloss,insert,thickness,modulation,which,could,efficiency,carrier,extraction,transfer,suppress,addition,iodide,surface,treatment,trap,density,stabilize,film,align,energy,levels,promotes,fill,short,current,Jsc,result,champion,double,side,optimized,exhibits,extraordinary,best,as,high,excellent,thermal,storage
AB值:
0.619387
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