Ga-free InAs/InAsSb type-Ⅱ superlattices(T2SL)have extensive application prospective in infrared photodetectors.Achieving higher operation temperature is critical to its commercial applications.Here,a fractional monolayer alloy method was used to grow InAsSb alloy with better controlled alloy composition.The as-grown T2SL gave eleven satellite peaks and a first satellite peak with a narrow full-width-half-maximum(FWHM)of 20.5 arcsec(1 arcsec=0.01592°).Strain mapping results indi-cated limited Sb diffusion through the As-Sb exchange process at the interface.Moreover,unlike interface states caused by the As-Sb exchange effect,this relatively clear interface was distinctive with localized states with higher activation energies of the non-radiative recombination process((18±1)meV and(84±12)meV at different temperature ranges),which means that this interface state introduced by fractional monolayer alloy growth method can effectively suppress Auger recombination process in T2SL.Through this interface engineering of InAs/InAsSb Type-Ⅱ superlattice,it achieved detective photolumines-cence(PL)signal with the center wavelength of 9 μm at 250K.

Bo-Wen Zhang;Dan Fang;Xuan Fang;Hong-Bin Zhao;Deng-Kui Wang;Jin-Hua Li;Xiao-Hua Wang;Dong-Bo Wang

State Key Laboratory of High Power Semiconductor Lasers,School of Science,Changchun University of Science and Technology,Changchun 130022,China;School of Science and Engineering,The Chinese University of Hong Kong,Shenzhen 518172,China;State Key Laboratory of Advanced Materials for Smart Sensing,General Research Institute for Nonferrous Metals,Beijing 100088,China;Department of Opto-electronic Information Science,School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China

稀有金属（英文版）

[1]Bo-Wen Zhang;Dan Fang;Xuan Fang;Hong-Bin Zhao;Deng-Kui Wang;Jin-Hua Li;Xiao-Hua Wang;Dong-Bo Wang-.InAs/InAsSb type-Ⅱ superlattice with near room-temperature long-wave emission through interface engineering)[J].稀有金属（英文版）,2022(03):982-991

T2SL,photolumines

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