A home-made low loss Bi/P co-doped silica fiber was fabricated using the modified chemical vapor deposition (MCVD) technique combined with the solution doping method, where the background loss at 1550 nm was as low as 17 dB/km. We demonstrated for the first time, to the best of our knowledge, an all-fiber amplifier using the home-made Bi/P co-doped fiber achieving broadband amplification in the E-band. The amplifying performance was evaluated and optimized with different pumping patterns and fiber length. A maximum net gain at 1355 nm close to 20 dB and a minimum noise figure of 4.6 dB were obtained for the first time, to the best of our knowledge, using two 1240 nm laser diodes under bidirectional pumping with the input pump and signal powers of 870 mW and -30 dBm, respectively.

Jinmin Tian;Mengting Guo;Fan Wang;Chunlei Yu;Lei Zhang;Meng Wang;Lili Hu

School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China;Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

中国光学快报（英文版）

[1]Jinmin Tian;Mengting Guo;Fan Wang;Chunlei Yu;Lei Zhang;Meng Wang;Lili Hu-.High gain E-band amplification based on the low loss Bi/P co-doped silica fiber)[J].中国光学快报（英文版）,2022(10):100602

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