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典型文献
Single photon emission and recombination dynamics in self-assembled GaN/AIN quantum dots
文献摘要:
Ill-nitride quantum dots(QDs)are a promising system actively studied for their ability to maintain single photon emission up to room temperature.Here,we report on the evolution of the emission properties of self-assembled GaN/AIN QDs for temperatures ranging from 5 to 300 K.We carefully track the photoluminescence of a single QD and measure an optimum single photon purity of g(2)(0)= 0.05±0.02 at 5 K and 0.17±0.08 at 300 K.We complement this study with temperature dependent time-resolved photoluminescence measurements(TRPL)performed on a QD ensemble to further investigate the exciton recombination dynamics of such polar zero-dimensional nanostructures.By comparing our results to past reports,we emphasize the complexity of recombination processes in this system.Instead of the more conventional mono-exponential decay typical of exciton recombination,TRPL transients display a bi-exponential feature with short-and long-lived components that persist in the low excitation regime.From the temperature insensitivity of the long-lived excitonic component,we first discard the interplay of dark-to-bright state refilling in the exciton recombination process.Besides,this temperature-invariance also highlights the absence of nonradiative exciton recombinations,a likely direct consequence of the strong carrier confinement observed in GaN/AIN QDs up to 300 K.Overall,our results support the viability of these dots as a potential single-photon source for quantum applications at room temperature.
文献关键词:
作者姓名:
Johann Stachurski;Sebastian Tamariz;Gordon Calllsen;Rapha?l Butté;Nicolas Grandjean
作者机构:
Institute of Physics,école Polytechnique Fédérale de Lausanne,EPFL,CH-1015 Lausanne,Switzerland;Université C?te d'Azur,CNRS,CRHEA,F-06560 Valbonne,France;Institut für Festk?rperphysik,Universit?t Bremen,28359 Bremen,Germany
引用格式:
[1]Johann Stachurski;Sebastian Tamariz;Gordon Calllsen;Rapha?l Butté;Nicolas Grandjean-.Single photon emission and recombination dynamics in self-assembled GaN/AIN quantum dots)[J].光:科学与应用(英文版),2022(05):751-765
A类:
refilling
B类:
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AB值:
0.551986
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