典型文献
New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization
文献摘要：
The first-order resonant Raman spectra of monolayer MOS2 are calculated under the circularly polarized photoexcitation.The anomalously nonzero Raman intensity of the in-plane E mode under the Z(σ+σ+)Z or(Z)(σ_σ_)Z geometry,which goes against the conventional selection rule,appears under some circum-stances when optical absorption occurs at some special reciprocal points between the zone-center Γ and the zone-edge-center M points.At that moment,the valley selectivity to the circular polarization is lifted.The analysis shows that the anomalous Raman intensity of the E mode for the same circularly polarized incident and scattered light is consistent with the pseudo-angular-momentum conservation law.The cal-culated E Raman tensor of monolayer MoS2 is found to vary with laser energy.The two diagonal terms of the Raman tensor change their signs from mutually opposite to the same when the relative intensity of the in-plane E mode to the out-of-plane A'1 mode increases,indicating the increasingly important role played by the Fr?lich-type electron-phonon interaction over the deformation potential.Our study may shed new light on the understanding of the novel electron-photon process and assist in the design of new type of optoelectronic devices.
文献关键词：
中图分类号：
作者姓名：
Jianqi Huang;Zhiyong Liu;Teng Yang;Zhidong Zhang
作者机构：
Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China;School of Materials Science and Engineering,University of Science and Technology of China,Shenyang 110016,China
文献出处：
引用格式：
[1]Jianqi Huang;Zhiyong Liu;Teng Yang;Zhidong Zhang-.New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization)[J].材料科学技术（英文版）,2022(07):132-136
A类：
lich
B类：
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AB值：
0.592376
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