典型文献
The Electronic and Optical Properties of Vertically Stacked GaN-WS2 Heterostructure
文献摘要：
The electronic structure and optical property of stacked GaN-WS2 heterostructure are explored with HSE06 calculation based on density functional theory. The direct band gap of GaN-WS2 heterostructure is 1.993 eV, which is obviously a type-Ⅱ band alignment semiconductor. Furthermore, the optical property of GaN-WS2 heterostructure such as absorption coefficient is analyzed. These new findings enable GaN-WS2 heterostructure to be promising candidates for photovoltaic cells and electronic devices in visible light.
文献关键词：
中图分类号：
作者姓名：
REN Dahua;QIAN Kai;LI Qiang;ZHANG Yuan;ZHANG Teng
作者机构：
School of Information Engineering,Hubei Minzu University,Enshi 44500,China;School of Advanced Materials and Mechatronic Engi-neering,Hubei Minzu University,Enshi 44500,China
文献出处：
引用格式：
[1]REN Dahua;QIAN Kai;LI Qiang;ZHANG Yuan;ZHANG Teng-.The Electronic and Optical Properties of Vertically Stacked GaN-WS2 Heterostructure)[J].武汉理工大学学报（材料科学版）（英文版）,2022(01):28-31
A类：
B类：
Electronic,Optical,Properties,Vertically,Stacked,GaN,WS2,Heterostructure,electronic,optical,property,stacked,heterostructure,are,explored,HSE06,calculation,density,functional,theory,direct,band,gap,eV,which,obviously,type,alignment,semiconductor,Furthermore,such,absorption,coefficient,analyzed,These,new,findings,enable,be,promising,candidates,photovoltaic,cells,devices,visible,light
AB值：
0.621451
相似文献
机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
