典型文献
A Design and Comparative Investigation of Graded AlxGa1-xN EBL for W-B0.375GaN/W-B0.45GaN Edge Emitting Laser Diode on AlN Substrate
文献摘要：
In this paper,we numerically demon-strated the possibility of using wurtzite boron gallium ni-tride(W-BGaN)as active layers(quantum well and quantum barriers)along with aluminum gallium nitride(AlGaN)to achieve lasing at a deep ultraviolet range at 263 nm for edge emitting laser diode.The laser diode struc-ture simulations were conducted by using the Crosslight-LASTIP software with a self-consistency model for varies quantity calculations.Moreover,multiple designed struc-tures such as full and half have been achieved as well as the study of the effect of grading engineering/techniques at the electron blocking layer for linearly-graded-down and linearly-graded-up grading techniques were also em-phasized.As a result,a maximum emitted power of 26 W,a minimum threshold current of 308 mA,a slope effi-ciency of 2.82 W/A,and a minimum p-type resistivity of 0.228 Ω cm from the different doping concentrations and geometrical distances were thoroughly observed and jot-ted down.
文献关键词：
中图分类号：
作者姓名：
NIASS Mussaab I.;WANG Fang;LIU Yuhuai
作者机构：
National Center for International Joint Research of Electronic Materials and Systems,International Joint-Laboratory of Electronic Materials and Systems of Henan Province,School of Information Engineering,Zhengzhou University,Zhengzhou 450001,China;Zhengzhou Way Do Electronics Co.Ltd.,Zhengzhou 450001,China;Research Institute of Industrial Technology Co.Ltd.,Zhengzhou University,Zhengzhou 450001,China;Institute of Materials and Systems for Sustainability,Nagoya University,Nagoya,Aichi-ken 464-8601,Japan
文献出处：
引用格式：
[1]NIASS Mussaab I.;WANG Fang;LIU Yuhuai-.A Design and Comparative Investigation of Graded AlxGa1-xN EBL for W-B0.375GaN/W-B0.45GaN Edge Emitting Laser Diode on AlN Substrate)[J].电子学报（英文）,2022(04):683-689
A类：
375GaN,45GaN,tride,BGaN,LASTIP,phasized,jot
B类：
Design,Comparative,Investigation,Graded,AlxGa1,xN,EBL,B0,Edge,Emitting,Laser,Diode,AlN,Substrate,this,paper,numerically,demon,strated,possibility,using,wurtzite,boron,gallium,active,layers,quantum,well,barriers,along,aluminum,nitride,AlGaN,lasing,deep,ultraviolet,range,edge,emitting,laser,diode,struc,simulations,were,conducted,by,Crosslight,software,self,consistency,model,varies,quantity,calculations,Moreover,multiple,designed,tures,such,full,half,have,been,achieved,study,effect,grading,engineering,techniques,electron,blocking,linearly,graded,down,up,also,result,maximum,emitted,power,minimum,threshold,current,mA,slope,effi,ciency,type,resistivity,from,different,doping,concentrations,geometrical,distances,thoroughly,observed
AB值：
0.638367
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