典型文献
Prototype of single-event effect localization system with CMOS pixel sensor
文献摘要：
The single-event effect(SEE)is a serious threat to electronics in radiation environments.The most impor-tant issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE.To solve this problem,a prototype based on a complementary metal oxide semiconductor(CMOS)pixel sensor,i.e.,Topmetal-M,was designed for SEE localization.A beam test was performed on the prototype at the radiation terminal of the Heavy Ion Research Facility in Lanzhou(HIRFL).The results indicated that the inherent deflection angle of the prototype to the beam was 1.7°,and the angular resolution was 0.6°.The prototype localized heavy ions with a posi-tion resolution of 3.4 pm.
文献关键词：
中图分类号：
作者姓名：
Jun Liu;Zhuo Zhou;Dong Wang;Shi-Qiang Zhou;Xiang-Ming Sun;Wei-Ping Ren;Bi-Hui You;Chao-Song Gao;Le Xiao;Ping Yang;Di Guo;Guang-Ming Huang;Wei Zhou;Cheng-Xin Zhao;Min Wang
作者机构：
PLAC,Key Laboratory of Quark&Lepton Physics(MOE),Central China Normal University,Wuhan 430079,China;Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China;School of Nuclear Science and Technology,University of Chinese Academy of Sciences,Beijing 100049,China
文献出处：
引用格式：
[1]Jun Liu;Zhuo Zhou;Dong Wang;Shi-Qiang Zhou;Xiang-Ming Sun;Wei-Ping Ren;Bi-Hui You;Chao-Song Gao;Le Xiao;Ping Yang;Di Guo;Guang-Ming Huang;Wei Zhou;Cheng-Xin Zhao;Min Wang-.Prototype of single-event effect localization system with CMOS pixel sensor)[J].核技术（英文版）,2022(11):10-20
A类：
Topmetal
B类：
Prototype,single,event,effect,localization,system,CMOS,pixel,sensor,SEE,serious,threat,electronics,radiation,environments,most,impor,tant,issue,hardening,studies,sensitive,region,solve,this,problem,prototype,complementary,oxide,semiconductor,was,designed,beam,test,performed,terminal,Heavy,Ion,Research,Facility,Lanzhou,HIRFL,results,indicated,that,inherent,deflection,angle,angular,resolution,localized,heavy,ions,posi
AB值：
0.559283
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