典型文献
Colossal negative magnetoresistance from hopping in insulating ferromagnetic semiconductors
文献摘要：
Ferromagnetic semiconductor Ga1-xMnxAs1-yPy thin films go through a metal-insulator transition at low temperat-ure where electrical conduction becomes driven by hopping of charge carriers.In this regime,we report a colossal negative mag-netoresistance(CNMR)coexisting with a saturated magnetic moment,unlike in the traditional magnetic semiconductor Ga1-xM-nxAs.By analyzing the temperature dependence of the resistivity at fixed magnetic field,we demonstrate that the CNMR can be consistently described by the field dependence of the localization length,which relates to a field dependent mobility edge.This dependence is likely due to the random environment of Mn atoms in Ga1-xMnxAs1-yPy which causes a random spatial distri-bution of the mobility that is suppressed by an increasing magnetic field.
文献关键词：
中图分类号：
作者姓名：
Xinyu Liu;Logan Riney;Josue Guerra;William Powers;Jiashu Wang;Jacek K.Furdyna;Badih A.Assaf
作者机构：
Department of Physics and Astronomy,University of Notre Dame,Notre Dame,IN 46556,USA
文献出处：
引用格式：
[1]Xinyu Liu;Logan Riney;Josue Guerra;William Powers;Jiashu Wang;Jacek K.Furdyna;Badih A.Assaf-.Colossal negative magnetoresistance from hopping in insulating ferromagnetic semiconductors)[J].半导体学报（英文版）,2022(11):45-50
A类：
Colossal,xMnxAs1,yPy,netoresistance,nxAs
B类：
negative,magnetoresistance,from,hopping,insulating,ferromagnetic,semiconductors,Ferromagnetic,Ga1,thin,films,go,through,metal,insulator,transition,low,where,electrical,conduction,becomes,driven,by,charge,carriers,In,this,regime,we,report,colossal,CNMR,coexisting,saturated,moment,unlike,traditional,By,analyzing,temperature,dependence,resistivity,fixed,field,demonstrate,that,can,consistently,described,localization,length,which,relates,dependent,mobility,edge,This,likely,due,random,environment,atoms,causes,spatial,distri,bution,suppressed,increasing
AB值：
0.556269
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