典型文献
Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga2O3 semiconductor thin films
文献摘要：
In this article,we present a theoretical study on the sub-bandgap refractive indexes and optical properties of Si-doped β-Ga2O3 thin films based on newly developed models.The measured sub-bandgap refractive indexes of β-Ga2O3 thin film are explained well with the new model,leading to the determination of an explicit analytical dispersion of refractive in-dexes for photon energy below an effective optical bandgap energy of 4.952 eV for the β-Ga2O3 thin film.Then,the oscillatory structures in long wavelength regions in experimental transmission spectra of Si-doped β-Ga2O3 thin films with different Si dop-ing concentrations are quantitively interpreted utilizing the determined sub-bandgap refractive index dispersion.Meanwhile,ef-fective optical bandgap values of Si-doped β-Ga2O3 thin films are further determined and are found to decrease with increas-ing the Si doping concentration as expectedly.In addition,the sub-bandgap absorption coefficients of Si-doped β-Ga2O3 thin film are calculated under the frame of the Franz-Keldysh mechanism due to the electric field effect of ionized Si impurities.The theoretical absorption coefficients agree with the available experimental data.These key parameters obtained in the present study may enrich the present understanding of the sub-bandgap refractive indexes and optical properties of impurity-dopedβ-Ga2O3 thin films.
文献关键词：
中图分类号：
作者姓名：
Yitian Bao;Xiaorui Wang;Shijie Xu
作者机构：
Department of Physics,The University of Hong Kong,Pokfulam Road,Hong Kong,China;Department of Optical Science and Engineering,School of Information Science and Technology,Fudan University,Shanghai 200438,China
文献出处：
引用格式：
[1]Yitian Bao;Xiaorui Wang;Shijie Xu-.Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga2O3 semiconductor thin films)[J].半导体学报（英文版）,2022(06):61-65
A类：
dexes,expectedly
B类：
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AB值：
0.416397
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