典型文献
Modulating properties by light ion irradiation:From novel functional materials to semiconductor power devices
文献摘要：
In this review,the application of light ion irradiation is discussed for tailoring novel functional materials and for im-proving the performance in SiC or Si based electrical power devices.The deep traps and electronic disorder produced by light ion irradiation can modify the electrical,magnetic,and optical properties of films(e.g.,dilute ferromagnetic semiconductors and topological materials).Additionally,benefiting from the high reproducibility,precise manipulation of functional depth and density of defects,as well as the flexible patternability,the helium or proton ion irradiation has been successfully employed in improving the dynamic performance of SiC and Si based PiN diode power devices by reducing their majority carrier lifetime,al-though the static performance is sacrificed due to deep level traps.Such a trade-off has been regarded as the key point to com-promise the static and dynamic performances of power devices.As a result,herein the light ion irradiation is highlighted in both exploring new physics and optimizing the performance in functional materials and electrical devices.
文献关键词：
中图分类号：
作者姓名：
Ye Yuan;Shengqiang Zhou;Xinqiang Wang
作者机构：
Songshan Lake Materials Laboratory,Dongguan 523808,China;Institute of Ion Beam Physics and Material Research,Helmholtz-Zentrum Dresden-Rossendorf,Dresden 01328,Germany;Dongguan Institute of Optoelectronics,Peking University,Dongguan 523808,China
文献出处：
引用格式：
[1]Ye Yuan;Shengqiang Zhou;Xinqiang Wang-.Modulating properties by light ion irradiation:From novel functional materials to semiconductor power devices)[J].半导体学报（英文版）,2022(06):25-36
A类：
patternability,PiN
B类：
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AB值：
0.517444
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