典型文献
Study of structure-property relationship of semiconductor nanomaterials by off-axis electron holography
文献摘要:
As the scaling down of semiconductor devices,it would be necessary to discover the structure-property relationship of semiconductor nanomaterials at nanometer scale.In this review,the quantitative characterization technique off-axis elec-tron holography is introduced in details,followed by its applications in various semiconductor nanomaterials including groupⅣ,compound and two-dimensional semiconductor nanostructures in static states as well as under various stimuli.The advant-ages and disadvantages of off-axis electron holography in material analysis are discussed,the challenges facing in-situ elec-tron holographic study of semiconductor devices at working conditions are presented,and all the possible influencing factors need to be considered to achieve the final goal of fulfilling quantitative characterization of the structure-property relationship of semiconductor devices at their working conditions.
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作者姓名:
Luying Li;Yongfa Cheng;Zunyu Liu;Shuwen Yan;Li Li;Jianbo Wang;Lei Zhang;Yihua Gao
作者机构:
Center for Nanoscale Characterization&Devices,Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,China;School of Physics and Technology,Center for Electron Microscopy,MOE Key Laboratory of Artificial Micro-and Nano-Structures,and the Institute for Advanced Studies,Wuhan University,Wuhan 430072,China;Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials,Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials,School of Materials Science and Engineering,Hubei University,Wuhan 430062,China
文献出处:
引用格式:
[1]Luying Li;Yongfa Cheng;Zunyu Liu;Shuwen Yan;Li Li;Jianbo Wang;Lei Zhang;Yihua Gao-.Study of structure-property relationship of semiconductor nanomaterials by off-axis electron holography)[J].半导体学报(英文版),2022(04):39-48
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0.511965
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