Silicon Hall-effect sensors have been widely used in industry and research fields due to their straightforward fabrica-tion process and CMOS compatibility.However,as their material property limitations,technicians usually implement complex CMOS circuits to improve the sensors'performance including temperature drift and offset compensation for fitting tough situ-ation,but it is no doubt that it increases the design complexity and the sensor area.Gallium arsenide(GaAs)is a superior materi-al of Hall-effect device because of its large mobility and stable temperature characteristics.Concerning there is no specified mod-elling of GaAs Hall-effect device,this paper investigated its modelling by using finite element method(FEM)software Silvaco TCAD·to help and guide GaAs Hall-effect device fabrication.The modeled sensor has been fabricated and its experimental res-ults are in agreement with the simulation results.Comparing to our previous silicon Hall-effect sensor,the GaAs Hall-effect sensor demonstrates potential and reliable benchmark for the future Hall magnetic sensor developments.

Hua Fan;Huichao Yue;Jiangmin Mao;Ting Peng;Siming Zuo;Quanyuan Feng;Qi Wei;Hadi Heidari

State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;Institute of Electronic and Information Engineering of UESTC in Guangdong,University of Electronic Science and Technology of China,Dongguan 523878,China; Chengdu HiWafer Semiconductor Co.,Ltd.,Chengdu 610225,China;James Watt School of Engineering,University of Glasgow,G12 8QQ,Glasgow,UK;Southwest Jiaotong University,Chengdu 611756,China;Department of Precision Instrument,Tsinghua University,Beijing 100084,China

半导体学报（英文版）

[1]Hua Fan;Huichao Yue;Jiangmin Mao;Ting Peng;Siming Zuo;Quanyuan Feng;Qi Wei;Hadi Heidari-.Modelling and fabrication of wide temperature range Al0.24Ga0.76As/GaAs Hall magnetic sensors)[J].半导体学报（英文版）,2022(03):87-93

24Ga0,76As

Modelling,fabrication,temperature,range,Al0,GaAs,Hall,magnetic,sensors,Silicon,effect,have,been,widely,used,industry,research,fields,due,their,straightforward,process,CMOS,compatibility,However,material,property,limitations,technicians,usually,implement,circuits,improve,performance,including,drift,offset,compensation,fitting,tough,situ,but,no,doubt,that,increases,design,complexity,area,Gallium,arsenide,superior,device,because,large,mobility,stable,characteristics,Concerning,there,specified,this,paper,investigated,modelling,by,using,finite,element,method,FEM,software,Silvaco,TCAD,help,guide,modeled,has,fabricated,experimental,agreement,simulation,results,Comparing,our,previous,silicon,demonstrates,potential,reliable,benchmark,future,developments

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