典型文献
Significant Lifetime Enhancement in QLEDs by Reducing Interfacial Charge Accumulation via Fluorine Incorporation in the ZnO Electron Transport Layer
文献摘要:
ZnO nanoparticles are widely used for the electron transport layers(ETLs)of quantum dots light emitting devices(QLEDs).In this work we show that incorporating fluorine(F)into the ZnO ETL results in significant enhancement in device electrolu-minescence stability,leading to LT50 at 100 cd m-2 of 2,370,000 h in red QLED,47X longer than the control devices.X-ray photo-electron spectroscopy,time-of-flight secondary ion mass spectroscopy,photolumi-nescence and electrical measurements show that the F passivates oxygen vacancies and reduces electron traps in ZnO.Transient photoluminescence versus bias measurements and capacitance-voltage-luminance measurements reveal that the CF4 plasma-treated ETLs lead to increased electron concentration in the QD and the QD/hole transport layer interface,subsequently decreasing hole accumulation,and hence the higher stability.The findings provide new insights into the critical roles that optimizing charge distribution across the layers play in influencing stability and present a novel and simple approach for extending QLED lifetimes.
文献关键词:
中图分类号:
作者姓名:
Dong Seob Chung;Tyler Davidson-Hall;Giovanni Cotella;Quan Lyu;Peter Chun;Hany Aziz
作者机构:
Department of Electrical and Computer Engineering,Waterloo Institute for Nanotechnology,University of Waterloo,200 University Avenue West,Waterloo,ON N2L 3G1,Canada;Ipswich Research Centre,Huawei Technologies Research&Development(UK)Ltd.,Phoenix House(B55),Adastral Park,Ipswich IP5 3RE,UK;Ottawa IC Laboratory,Huawei Canada,19 Allstate Parkway,Markham,ON L3R 5B4,Canada
文献出处:
引用格式:
[1]Dong Seob Chung;Tyler Davidson-Hall;Giovanni Cotella;Quan Lyu;Peter Chun;Hany Aziz-.Significant Lifetime Enhancement in QLEDs by Reducing Interfacial Charge Accumulation via Fluorine Incorporation in the ZnO Electron Transport Layer)[J].纳微快报(英文),2022(12):432-446
A类:
electrolu,47X
B类:
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AB值:
0.628388
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