典型文献
Identification of the phosphorus-doping defect in MgS as a potential qubit
文献摘要：
The Ps defect is obtained by replacing one S atom with one P atom in the wide-bandgap semiconductor MgS.Based on first-principles calculations,the formation energy,defect levels,and electronic structure of the Ps defect in different charge states are evaluated.We predict that the neutral PS0 and positively charged PS+1 are the plausible qubit candidates for the construction of quantum systems,since they maintain the spin conservation during optical excited transition.The zero-phonon lines at the PS0 and PS+1 defects are 0.43 eV and 0.21 eV,respectively,which fall in the infrared band.In addition,the zero-field splitting parameter D of the PS+1 with spin-triplet is 2920 MHz,which is in the range of microwave,showing that the PS+1 defect can be manipulated by microwave.Finally,the principal values of the hyperfine tensor are examined,it is found that they decay exponentially with the distance from the defect site.
文献关键词：
中图分类号：
作者姓名：
Jijun Huang;Xueling Lei
作者机构：
Department of Physics,Jiangxi Normal University,Nanchang 330022,China
文献出处：
引用格式：
[1]Jijun Huang;Xueling Lei-.Identification of the phosphorus-doping defect in MgS as a potential qubit)[J].中国物理B（英文版）,2022(10):292-298
A类：
PS0,PS+1
B类：
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AB值：
0.558148
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