典型文献
Characterization of a nano line width reference material based on metrological scanning electron microscope
文献摘要:
The line width(often synonymously used for critical dimension,CD)is a crucial parameter in integrated circuits.To accurately control CD values in manufacturing,a reasonable CD reference material is required to calibrate the corre-sponding instruments.We develop a new reference material with nominal CDs of 160 nm,80 nm,and 40 nm.The line features are investigated based on the metrological scanning electron microscope which is developed by the National Insti-tute of Metrology(NIM)in China.Also,we propose a new characterization method for the precise measurement of CD values.After filtering and leveling the intensity profiles,the line features are characterized by the combination model of the Gaussian and Lorentz functions.The left and right edges of CD are automatically extracted with the profile decompo-sition and k-means algorithm.Then the width of the two edges at the half intensity position is regarded as the standard CD value.Finally,the measurement results are evaluated in terms of the sample,instrument,algorithm,and repeatability.The experiments indicate efficiency of the proposed method which can be easily applied in practice to accurately characterize CDs.
文献关键词:
中图分类号:
作者姓名:
Fang Wang;Yushu Shi;Wei Li;Xiao Deng;Xinbin Cheng;Shu Zhang;Xixi Yu
作者机构:
National Institute of Metrology,Beijing 100029,China;Tongji University,Shanghai 200092,China;Shenzhen Institute Technology Innovation,National Institute of Metrology,Shenzhen 518038,China
文献出处:
引用格式:
[1]Fang Wang;Yushu Shi;Wei Li;Xiao Deng;Xinbin Cheng;Shu Zhang;Xixi Yu-.Characterization of a nano line width reference material based on metrological scanning electron microscope)[J].中国物理B(英文版),2022(05):231-239
A类:
metrological,tute
B类:
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AB值:
0.560755
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